Efficiency enhancement of InGaN-based multiple quantum well solar cells employing antireflective ZnO nanorod arrays
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
Author(s)
Detail(s)
Original language | English |
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Article number | 5930323 |
Pages (from-to) | 1104-1106 |
Journal / Publication | IEEE Electron Device Letters |
Volume | 32 |
Issue number | 8 |
Online published | 27 Jun 2011 |
Publication status | Published - Aug 2011 |
Externally published | Yes |
Link(s)
Abstract
Antireflective ZnO nanorod arrays (NRAs) by a scalable chemical method have been applied for InGaN-based multiple quantum well solar cells. The length of the NRAs plays an important role in photovoltaic characteristics. It was found that the 1.1-μm-long NRA results in enhanced conversion efficiency due to the suppressed surface reflection. However, the 2.5-μm-long NRAs, although exhibiting the lowest reflection, lead to slightly deteriorated performances, possibly due to the increased absorption of the NRAs. The results indicate that the absorption of lengthened NRAs should be considered when optimizing their antireflection performances. We demonstrated a viable efficiency-boosting way for photovoltaics.
Research Area(s)
- Antireflection (AR), conversion efficiency, InGaN, multiple quantum well (MQW), solar cells, ZnO nanorod arrays (NRAs)
Citation Format(s)
Efficiency enhancement of InGaN-based multiple quantum well solar cells employing antireflective ZnO nanorod arrays. / Lin, G. J.; Lai, K. Y.; Lin, C. A. et al.
In: IEEE Electron Device Letters, Vol. 32, No. 8, 5930323, 08.2011, p. 1104-1106.
In: IEEE Electron Device Letters, Vol. 32, No. 8, 5930323, 08.2011, p. 1104-1106.
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review