Efficiency enhancement of InGaN-based multiple quantum well solar cells employing antireflective ZnO nanorod arrays

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

27 Scopus Citations
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Author(s)

  • G. J. Lin
  • K. Y. Lai
  • C. A. Lin
  • Y.-L. Lai
  • J. H. He

Detail(s)

Original languageEnglish
Article number5930323
Pages (from-to)1104-1106
Journal / PublicationIEEE Electron Device Letters
Volume32
Issue number8
Online published27 Jun 2011
Publication statusPublished - Aug 2011
Externally publishedYes

Abstract

Antireflective ZnO nanorod arrays (NRAs) by a scalable chemical method have been applied for InGaN-based multiple quantum well solar cells. The length of the NRAs plays an important role in photovoltaic characteristics. It was found that the 1.1-μm-long NRA results in enhanced conversion efficiency due to the suppressed surface reflection. However, the 2.5-μm-long NRAs, although exhibiting the lowest reflection, lead to slightly deteriorated performances, possibly due to the increased absorption of the NRAs. The results indicate that the absorption of lengthened NRAs should be considered when optimizing their antireflection performances. We demonstrated a viable efficiency-boosting way for photovoltaics.

Research Area(s)

  • Antireflection (AR), conversion efficiency, InGaN, multiple quantum well (MQW), solar cells, ZnO nanorod arrays (NRAs)

Citation Format(s)

Efficiency enhancement of InGaN-based multiple quantum well solar cells employing antireflective ZnO nanorod arrays. / Lin, G. J.; Lai, K. Y.; Lin, C. A. et al.
In: IEEE Electron Device Letters, Vol. 32, No. 8, 5930323, 08.2011, p. 1104-1106.

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review