Efficiency dip observed with InGaN-based multiple quantum well solar cells

K. Y. Lai; G. J. Lin; Yuh-Renn Wu; Meng-Lun Tsai; Jr-Hau He

doi:10.1364/OE.22.0A1753

Efficiency dip observed with InGaN-based multiple quantum well solar cells

K. Y. Lai
, G. J. Lin
, Yuh-Renn Wu
, Meng-Lun Tsai
, Jr-Hau He^*

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

7 Citations (Scopus)

Abstract

The dip of external quantum efficiency (EQE) is observed on In_0.15Ga_0.85N/GaN multiple quantum well (MQW) solar cells upon the increase of incident optical power density. With indium composition increased to 25%, the EQE dip becomes much less noticeable. The composition dependence of EQE dip is ascribed to the competition between radiative recombination and photocurrent generation in the active region, which are dictated by quantum-confined Stark effect (QCSE) and composition fluctuation in the MQWs.

Original language	English
Pages (from-to)	A1753-A1760
Journal	Optics Express
Volume	22
Issue number	S7
Online published	29 Oct 2014
DOIs	https://doi.org/10.1364/OE.22.0A1753
Publication status	Published - 15 Dec 2014
Externally published	Yes

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This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Research Keywords

Solar energy
Photovoltaic
Quantum-well, -wire and -dot devices
Electro-optical materials

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10.1364/OE.22.0A1753

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@article{3373804fddd74916bfb141e53eff5642,

title = "Efficiency dip observed with InGaN-based multiple quantum well solar cells",

abstract = "The dip of external quantum efficiency (EQE) is observed on In0.15Ga0.85N/GaN multiple quantum well (MQW) solar cells upon the increase of incident optical power density. With indium composition increased to 25\%, the EQE dip becomes much less noticeable. The composition dependence of EQE dip is ascribed to the competition between radiative recombination and photocurrent generation in the active region, which are dictated by quantum-confined Stark effect (QCSE) and composition fluctuation in the MQWs.",

keywords = "Solar energy, Photovoltaic, Quantum-well, -wire and -dot devices, Electro-optical materials",

author = "Lai, \{K. Y.\} and Lin, \{G. J.\} and Yuh-Renn Wu and Meng-Lun Tsai and Jr-Hau He",

year = "2014",

month = dec,

day = "15",

doi = "10.1364/OE.22.0A1753",

language = "English",

volume = "22",

pages = "A1753--A1760",

journal = "Optics Express",

issn = "1094-4087",

publisher = "Optica Publishing Group",

number = "S7",

}

TY - JOUR

T1 - Efficiency dip observed with InGaN-based multiple quantum well solar cells

AU - Lai, K. Y.

AU - Lin, G. J.

AU - Wu, Yuh-Renn

AU - Tsai, Meng-Lun

AU - He, Jr-Hau

PY - 2014/12/15

Y1 - 2014/12/15

N2 - The dip of external quantum efficiency (EQE) is observed on In0.15Ga0.85N/GaN multiple quantum well (MQW) solar cells upon the increase of incident optical power density. With indium composition increased to 25%, the EQE dip becomes much less noticeable. The composition dependence of EQE dip is ascribed to the competition between radiative recombination and photocurrent generation in the active region, which are dictated by quantum-confined Stark effect (QCSE) and composition fluctuation in the MQWs.

AB - The dip of external quantum efficiency (EQE) is observed on In0.15Ga0.85N/GaN multiple quantum well (MQW) solar cells upon the increase of incident optical power density. With indium composition increased to 25%, the EQE dip becomes much less noticeable. The composition dependence of EQE dip is ascribed to the competition between radiative recombination and photocurrent generation in the active region, which are dictated by quantum-confined Stark effect (QCSE) and composition fluctuation in the MQWs.

KW - Solar energy

KW - Photovoltaic

KW - Quantum-well, -wire and -dot devices

KW - Electro-optical materials

UR - https://www.scopus.com/pages/publications/84919664384

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-84919664384&origin=recordpage

U2 - 10.1364/OE.22.0A1753

DO - 10.1364/OE.22.0A1753

M3 - RGC 21 - Publication in refereed journal

SN - 1094-4087

VL - 22

SP - A1753-A1760

JO - Optics Express

JF - Optics Express

IS - S7

ER -

Efficiency dip observed with InGaN-based multiple quantum well solar cells

Abstract

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