Effects of V-shaped edge defect and H-saturation on spin-dependent electronic transport of zigzag MoS2 nanoribbons

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal

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Author(s)

  • Xin-Mei Li
  • Mengqiu LONG
  • Li-Ling Cui
  • Jin Xiao
  • Xiao-Jiao Zhang
  • And 2 others
  • Dan Zhang
  • Hui Xu

Detail(s)

Original languageEnglish
Pages (from-to)2701-2707
Journal / PublicationPhysics Letters, Section A: General, Atomic and Solid State Physics
Volume378
Issue number36
Publication statusPublished - 18 Jul 2014

Abstract

Based on nonequilibrium Green's function in combination with density functional theory calculations, the spin-dependent electronic transport properties of one-dimensional zigzag molybdenum disulfide (MoS2) nanoribbons with V-shaped defect and H-saturation on the edges have been studied. Our results show that the spin-polarized transport properties can be found in all the considered zigzag MoS2 nanoribbons systems. The edge defects, especially the V-shaped defect on the Mo edge, and H-saturation on the edges can suppress the electronic transport of the systems. Also, the spin-filtering and negative differential resistance behaviors can be observed obviously. The mechanisms are proposed for these phenomena. (C) 2014 Elsevier B.V. All rights reserved.

Research Area(s)

  • Zigzag MoS2 nanoribbons, V-shaped edge defect, H-saturation, Spin-dependent transport property, Negative differential resistance, NEGATIVE DIFFERENTIAL RESISTANCE, GRAPHENE NANORIBBONS, MAGNETIC-PROPERTIES, SINGLE-LAYER, TRANSISTORS, STABILITY, NANOTUBES

Citation Format(s)

Effects of V-shaped edge defect and H-saturation on spin-dependent electronic transport of zigzag MoS2 nanoribbons. / Li, Xin-Mei; LONG, Mengqiu; Cui, Li-Ling; Xiao, Jin; Zhang, Xiao-Jiao; Zhang, Dan; Xu, Hui.

In: Physics Letters, Section A: General, Atomic and Solid State Physics, Vol. 378, No. 36, 18.07.2014, p. 2701-2707.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal