Effects of V-shaped edge defect and H-saturation on spin-dependent electronic transport of zigzag MoS2 nanoribbons
Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal
|Journal / Publication||Physics Letters, Section A: General, Atomic and Solid State Physics|
|Publication status||Published - 18 Jul 2014|
Based on nonequilibrium Green's function in combination with density functional theory calculations, the spin-dependent electronic transport properties of one-dimensional zigzag molybdenum disulfide (MoS2) nanoribbons with V-shaped defect and H-saturation on the edges have been studied. Our results show that the spin-polarized transport properties can be found in all the considered zigzag MoS2 nanoribbons systems. The edge defects, especially the V-shaped defect on the Mo edge, and H-saturation on the edges can suppress the electronic transport of the systems. Also, the spin-filtering and negative differential resistance behaviors can be observed obviously. The mechanisms are proposed for these phenomena. (C) 2014 Elsevier B.V. All rights reserved.
- Zigzag MoS2 nanoribbons, V-shaped edge defect, H-saturation, Spin-dependent transport property, Negative differential resistance, NEGATIVE DIFFERENTIAL RESISTANCE, GRAPHENE NANORIBBONS, MAGNETIC-PROPERTIES, SINGLE-LAYER, TRANSISTORS, STABILITY, NANOTUBES
Effects of V-shaped edge defect and H-saturation on spin-dependent electronic transport of zigzag MoS2 nanoribbons. / Li, Xin-Mei; LONG, Mengqiu; Cui, Li-Ling; Xiao, Jin; Zhang, Xiao-Jiao; Zhang, Dan; Xu, Hui.In: Physics Letters, Section A: General, Atomic and Solid State Physics, Vol. 378, No. 36, 18.07.2014, p. 2701-2707.