Effects of thermal annealing on the tungsten/lanthanum oxide interface

Research output: Chapters, Conference Papers, Creative and Literary Works (RGC: 12, 32, 41, 45)32_Refereed conference paper (with ISBN/ISSN)peer-review

1 Scopus Citations
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Author(s)

  • Jie Qoing Zhang
  • Kuniyuki Kakushima
  • Hiroshi Iwai
  • Jian Zhang
  • Hao Jin

Related Research Unit(s)

Detail(s)

Original languageEnglish
Title of host publicationElectronics and Electrical Engineering - Proceedings of the Asia-Pacific Conference on Electronics and Electrical Engineering, EEEC 2014
PublisherCRC Press/Balkema
Pages23-26
ISBN (Print)9781138028098
Publication statusPublished - 2015

Conference

TitleProceedings of the Asia-Pacific Conference on Electronics and Electrical Engineering, EEEC 2014
PlaceChina
CityShanghai
Period27 - 28 December 2014

Abstract

ABSTRACT: Tungsten (W)/lanthanum oxide (La2O3) stack has been considered as the promising metalgate/ high-k gate material for future CMOS technology nodes. The requirement of subnanometer Equivalent Oxide Thickness (EOT) has called for some more stringent constraints on the high-k dielectric film properties as well as the high-k/silicon and high-k/metal interfaces. This work reports the reactions taken place at the W/La2O3 interface during thermal treatment at temperature above 500°C. Angle-Resolved X-ray Photoelectron Spectroscopy (ARXPS) measurements on the bonding structure and composition distribution of the W/La2O3 stack indicate that the sputtered tungsten film has high-oxygen content of over40%which can be further enhanced with thermal annealing. The thermal treatment also enhances the out-diffusion of La atoms and forming La-O-W phases at the W/La2O3 interface. These effects would result in the increase of oxygen vacancies in the La2O3 film and need to be suppressed.

Citation Format(s)

Effects of thermal annealing on the tungsten/lanthanum oxide interface. / Wong, Hei; Zhang, Jie Qoing; Kakushima, Kuniyuki; Iwai, Hiroshi; Zhang, Jian; Jin, Hao.

Electronics and Electrical Engineering - Proceedings of the Asia-Pacific Conference on Electronics and Electrical Engineering, EEEC 2014. CRC Press/Balkema, 2015. p. 23-26.

Research output: Chapters, Conference Papers, Creative and Literary Works (RGC: 12, 32, 41, 45)32_Refereed conference paper (with ISBN/ISSN)peer-review