Effects of structural defects on the activation of sulfur donors in GaNxAs1-x formed by N implantation

J. Jasinski; K. M. Yu; W. Walukiewicz; Z. Liliental-Weber; J. Washburn

doi:10.1016/S0921-4526(01)00930-9

Effects of structural defects on the activation of sulfur donors in GaNxAs1-x formed by N implantation

J. Jasinski, K. M. Yu, W. Walukiewicz, Z. Liliental-Weber, J. Washburn

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

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Abstract

The effects of structural defects on the electrical activity of S-doped GaN_xAs_1-x layers formed by S and N co-implantation in GaAs are reported. S and N ions were implanted to the depth of about 0.4μm. Electrochemical capacitance voltage measurements on samples annealed at 945°C for 10s show that in a thin (

Original language	English
Pages (from-to)	874-876
Journal	Physica B: Condensed Matter
Volume	308-310
DOIs	https://doi.org/10.1016/S0921-4526(01)00930-9
Publication status	Published - Dec 2001
Externally published	Yes

Research Keywords

GaNxAs1-x
Implantation
Microstructure
TEM

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10.1016/S0921-4526(01)00930-9

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title = "Effects of structural defects on the activation of sulfur donors in GaNxAs1-x formed by N implantation",

abstract = "The effects of structural defects on the electrical activity of S-doped GaNxAs1-x layers formed by S and N co-implantation in GaAs are reported. S and N ions were implanted to the depth of about 0.4μm. Electrochemical capacitance voltage measurements on samples annealed at 945°C for 10s show that in a thin (",

keywords = "GaNxAs1-x, Implantation, Microstructure, TEM",

author = "J. Jasinski and Yu, {K. M.} and W. Walukiewicz and Z. Liliental-Weber and J. Washburn",

year = "2001",

month = dec,

doi = "10.1016/S0921-4526(01)00930-9",

language = "English",

volume = "308-310",

pages = "874--876",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Effects of structural defects on the activation of sulfur donors in GaNxAs1-x formed by N implantation

AU - Jasinski, J.

AU - Yu, K. M.

AU - Walukiewicz, W.

AU - Liliental-Weber, Z.

AU - Washburn, J.

PY - 2001/12

Y1 - 2001/12

N2 - The effects of structural defects on the electrical activity of S-doped GaNxAs1-x layers formed by S and N co-implantation in GaAs are reported. S and N ions were implanted to the depth of about 0.4μm. Electrochemical capacitance voltage measurements on samples annealed at 945°C for 10s show that in a thin (

AB - The effects of structural defects on the electrical activity of S-doped GaNxAs1-x layers formed by S and N co-implantation in GaAs are reported. S and N ions were implanted to the depth of about 0.4μm. Electrochemical capacitance voltage measurements on samples annealed at 945°C for 10s show that in a thin (

KW - GaNxAs1-x

KW - Implantation

KW - Microstructure

KW - TEM

UR - http://www.scopus.com/inward/record.url?scp=0035672115&partnerID=8YFLogxK

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0035672115&origin=recordpage

U2 - 10.1016/S0921-4526(01)00930-9

DO - 10.1016/S0921-4526(01)00930-9

M3 - RGC 21 - Publication in refereed journal

SN - 0921-4526

VL - 308-310

SP - 874

EP - 876

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

ER -

Effects of structural defects on the activation of sulfur donors in GaNxAs1-x formed by N implantation

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