Effects of stirring on the bulk etch rate of LR 115 detector

C. W Y Yip, J. P Y Ho, V. S Y Koo, D. Nikezic, K. N. Yu

    Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

    39 Citations (Scopus)

    Abstract

    The effects of stirring on the bulk etch rate of LR 115 detector has been investigated. The surface profile measurement method using an instrument called Form Talysurf has been used to measure the thickness of the active layer of the LR 115 detectors. The etchant was 10% aqueous solution of NaOH maintained at 60°C. The bulk etch rate under magnetic stirring has been found to be 6.65 ± 0.34 μm h-1 and that under no stirring to be 3.61 ± 0.14 μm h-1. The initial thickness of the active layer before etching also varies. © 2003 Elsevier Science Ltd. All rights reserved.
    Original languageEnglish
    Pages (from-to)197-200
    JournalRadiation Measurements
    Volume37
    Issue number3
    DOIs
    Publication statusPublished - Jun 2003

    Research Keywords

    • Bulk etch rate
    • LR 115
    • Natural radioactivity
    • Radon
    • Solid state nuclear track detector
    • SSNTD

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