Effects of stirring on the bulk etch rate of LR 115 detector

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

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Author(s)

  • C. W Y Yip
  • J. P Y Ho
  • V. S Y Koo
  • D. Nikezic
  • K. N. Yu

Detail(s)

Original languageEnglish
Pages (from-to)197-200
Journal / PublicationRadiation Measurements
Volume37
Issue number3
Publication statusPublished - Jun 2003

Abstract

The effects of stirring on the bulk etch rate of LR 115 detector has been investigated. The surface profile measurement method using an instrument called Form Talysurf has been used to measure the thickness of the active layer of the LR 115 detectors. The etchant was 10% aqueous solution of NaOH maintained at 60°C. The bulk etch rate under magnetic stirring has been found to be 6.65 ± 0.34 μm h-1 and that under no stirring to be 3.61 ± 0.14 μm h-1. The initial thickness of the active layer before etching also varies. © 2003 Elsevier Science Ltd. All rights reserved.

Research Area(s)

  • Bulk etch rate, LR 115, Natural radioactivity, Radon, Solid state nuclear track detector, SSNTD

Citation Format(s)

Effects of stirring on the bulk etch rate of LR 115 detector. / Yip, C. W Y; Ho, J. P Y; Koo, V. S Y et al.
In: Radiation Measurements, Vol. 37, No. 3, 06.2003, p. 197-200.

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review