Effects of silicon surface defects on the graphene/silicon Schottky characteristics

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

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Original languageEnglish
Article number104744
Journal / PublicationResults in Physics
Volume29
Online published25 Aug 2021
Publication statusPublished - Oct 2021

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Abstract

Distinct characteristics and yet adverse in some cases have been widely reported in the graphene/silicon Schottky junction under DC biasing, for biological and chemical sensing, or as a photodetector. The explanations to these observations are often attributed to the nature of the graphene layer but are still far from satisfactorily for many cases. In this work, we conducted a detailed analysis on both the forward and reverse current-voltage characteristics under different temperatures and we proposed that the silicon surface defects, which had been well-known as Pb0 centers or ≡Si, should play an important role in the adverse characteristics observed in the Gr/Si junction. Compared with the metal/Si and oxide/Si interface, the graphene-isolated Pb0 centers at the Gr/Si interface are chemically inactive but are still electrically active and that modify the carrier transportation over the junction barrier. Without efficient chemical passivation, the graphene-covered Si surface should maintain the most native Si surface such that it preserves a much higher amount of Pb0 centers as compared with other Si junctions or interfaces. This should be the main origin for the reported adverse current-voltage characteristics.

Research Area(s)

  • Graphene/silicon Schottky diode, Pb0 centers, Silicon dangling bond, Temperature dependence

Citation Format(s)

Effects of silicon surface defects on the graphene/silicon Schottky characteristics. / Wong, Hei; Anwar, Muhammad Abid; Dong, Shurong.
In: Results in Physics, Vol. 29, 104744, 10.2021.

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

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