TY - JOUR
T1 - Effects of Self-Assembled Monolayer Modification of Nickel Oxide Nanoparticles Layer on the Performance and Application of Inverted Perovskite Solar Cells
AU - Wang, Qin
AU - Chueh, Chu-Chen
AU - Zhao, Ting
AU - Cheng, Jiaqi
AU - Eslamian, Morteza
AU - Choy, Wallace C. H.
AU - Jen, Alex K.-Y.
PY - 2017/10
Y1 - 2017/10
N2 - Entirely low-temperature solution-processed (≤100 °C) planar p-i-n perovskite solar cells (PSCs) offer great potential for commercialization of roll-to-roll fabricated photovoltaic devices. However, the stable inorganic hole-transporting layer (HTL) in PSCs is usually processed at high temperature (200–500 °C), which is far beyond the tolerant temperature (≤150 °C) of roll-to-roll fabrication. In this context, inorganic NiOx nanoparticles (NPs) are an excellent candidate to serve as the HTL in PSCs, owing to their excellent solution processability at room temperature. However, the low-temperature processing condition is usually accompanied with defect formation, which deteriorates the film quality and device efficiency to a large extent. To suppress this setback, we used a series of benzoic acid selfassembled monolayers (SAMs) to passivate the surface defects of the NiOx NPs and found that 4-bromobenzoic acid could effectively play the role of the surface passivation. This SAM layer reduces the trap-assisted recombination, minimizes the energy offset between the NiOx NPs and perovskite, and changes the HTL surface wettability, thus enhancing the perovskite crystallization, resulting in more stable PSCs with enhanced power conversion efficiency (PCE) of 18.4 %, exceeding the control device PCE (15.5 %). Also, we incorporated the above-mentioned SAMs into flexible PSCs (F-PSCs) and achieved one of the highest PCE of 16.2 % on a polyethylene terephthalate (PET) substrate with a remarkable power-per-weight of 26.9 W g−1. This facile interfacial engineering method offers great potential for the large-scale manufacturing and commercialization of PSCs.
AB - Entirely low-temperature solution-processed (≤100 °C) planar p-i-n perovskite solar cells (PSCs) offer great potential for commercialization of roll-to-roll fabricated photovoltaic devices. However, the stable inorganic hole-transporting layer (HTL) in PSCs is usually processed at high temperature (200–500 °C), which is far beyond the tolerant temperature (≤150 °C) of roll-to-roll fabrication. In this context, inorganic NiOx nanoparticles (NPs) are an excellent candidate to serve as the HTL in PSCs, owing to their excellent solution processability at room temperature. However, the low-temperature processing condition is usually accompanied with defect formation, which deteriorates the film quality and device efficiency to a large extent. To suppress this setback, we used a series of benzoic acid selfassembled monolayers (SAMs) to passivate the surface defects of the NiOx NPs and found that 4-bromobenzoic acid could effectively play the role of the surface passivation. This SAM layer reduces the trap-assisted recombination, minimizes the energy offset between the NiOx NPs and perovskite, and changes the HTL surface wettability, thus enhancing the perovskite crystallization, resulting in more stable PSCs with enhanced power conversion efficiency (PCE) of 18.4 %, exceeding the control device PCE (15.5 %). Also, we incorporated the above-mentioned SAMs into flexible PSCs (F-PSCs) and achieved one of the highest PCE of 16.2 % on a polyethylene terephthalate (PET) substrate with a remarkable power-per-weight of 26.9 W g−1. This facile interfacial engineering method offers great potential for the large-scale manufacturing and commercialization of PSCs.
KW - band bending
KW - energy level alignment
KW - flexible perovskite solar cell
KW - interfacial engineering
KW - self-assembled monolayer
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UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-85030320028&origin=recordpage
U2 - 10.1002/cssc.201701262
DO - 10.1002/cssc.201701262
M3 - RGC 21 - Publication in refereed journal
SN - 1864-5631
VL - 10
SP - 3794
EP - 3803
JO - ChemSusChem
JF - ChemSusChem
IS - 19
ER -