Effects of rapid thermal annealing on the interface and oxide trap distributions in hafnium oxide films

Nian Zhan; K. L. Ng; Hei Wong; M. C. Poon; C. W. Kok

doi:10.1109/EDSSC.2003.1283566

Effects of rapid thermal annealing on the interface and oxide trap distributions in hafnium oxide films

Nian Zhan, K. L. Ng, Hei Wong, M. C. Poon, C. W. Kok

Department of Electrical Engineering

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

12 Citations (Scopus)

Abstract

The effects of rapid thermal annealing on the interface charge and oxide charge densities of sputtered hafnium oxide (HfO₂) films were investigated systematically. We found that both interface and oxide charge densities are strongly governed by tbe post-deposition annealing (PDA) conditions but have different dependencies. Tbe interface trap density can be reduced by more than one order of magnitude to a value close to that of the Si/SiO₂ interface after proper (> 600 °C) annealing. This effect is due to the formation of SiO₂ at Ihe HfO₂/Si interface. However, PDA has a negative impact on the oxide charge density. The PDA-induced oxide charge generation is attributed to the grain boundary interface states because of the crystallization of the HfO₂ at temperature greater than 650 °C.

Original language	English
Title of host publication	2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003
Publisher	IEEE
Pages	431-434
ISBN (Print)	0780377494, 9780780377493
DOIs	https://doi.org/10.1109/EDSSC.2003.1283566
Publication status	Published - 2003
Event	2003 IEEE Conference on Electron Devices and Solid-State Circuits - New World Renaissance Hotel, Hong Kong, China Duration: 16 Dec 2003 → 18 Dec 2003

Conference

Conference	2003 IEEE Conference on Electron Devices and Solid-State Circuits
Place	Hong Kong, China
Period	16/12/03 → 18/12/03

Research Keywords

Dielectric film
Hafnium oxide
High-κ
MOS devices
Oxide trap
Reliability

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10.1109/EDSSC.2003.1283566

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@inproceedings{29c5f858ed1649a3bdec10ca248a17e3,

title = "Effects of rapid thermal annealing on the interface and oxide trap distributions in hafnium oxide films",

abstract = "The effects of rapid thermal annealing on the interface charge and oxide charge densities of sputtered hafnium oxide (HfO2) films were investigated systematically. We found that both interface and oxide charge densities are strongly governed by tbe post-deposition annealing (PDA) conditions but have different dependencies. Tbe interface trap density can be reduced by more than one order of magnitude to a value close to that of the Si/SiO2 interface after proper (> 600 °C) annealing. This effect is due to the formation of SiO2 at Ihe HfO2/Si interface. However, PDA has a negative impact on the oxide charge density. The PDA-induced oxide charge generation is attributed to the grain boundary interface states because of the crystallization of the HfO2 at temperature greater than 650 °C.",

keywords = "Dielectric film, Hafnium oxide, High-κ, MOS devices, Oxide trap, Reliability",

author = "Nian Zhan and Ng, {K. L.} and Hei Wong and Poon, {M. C.} and Kok, {C. W.}",

year = "2003",

doi = "10.1109/EDSSC.2003.1283566",

language = "English",

isbn = "0780377494",

pages = "431--434",

booktitle = "2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003",

publisher = "IEEE",

address = "United States",

note = "2003 IEEE Conference on Electron Devices and Solid-State Circuits ; Conference date: 16-12-2003 Through 18-12-2003",

}

Zhan, N, Ng, KL, Wong, H, Poon, MC & Kok, CW 2003, Effects of rapid thermal annealing on the interface and oxide trap distributions in hafnium oxide films. in 2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003., 1283566, IEEE, pp. 431-434, 2003 IEEE Conference on Electron Devices and Solid-State Circuits, Hong Kong, China, 16/12/03. https://doi.org/10.1109/EDSSC.2003.1283566

Effects of rapid thermal annealing on the interface and oxide trap distributions in hafnium oxide films. / Zhan, Nian; Ng, K. L.; Wong, Hei et al.
2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003. IEEE, 2003. p. 431-434 1283566.

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

TY - GEN

T1 - Effects of rapid thermal annealing on the interface and oxide trap distributions in hafnium oxide films

AU - Zhan, Nian

AU - Ng, K. L.

AU - Wong, Hei

AU - Poon, M. C.

AU - Kok, C. W.

PY - 2003

Y1 - 2003

N2 - The effects of rapid thermal annealing on the interface charge and oxide charge densities of sputtered hafnium oxide (HfO2) films were investigated systematically. We found that both interface and oxide charge densities are strongly governed by tbe post-deposition annealing (PDA) conditions but have different dependencies. Tbe interface trap density can be reduced by more than one order of magnitude to a value close to that of the Si/SiO2 interface after proper (> 600 °C) annealing. This effect is due to the formation of SiO2 at Ihe HfO2/Si interface. However, PDA has a negative impact on the oxide charge density. The PDA-induced oxide charge generation is attributed to the grain boundary interface states because of the crystallization of the HfO2 at temperature greater than 650 °C.

AB - The effects of rapid thermal annealing on the interface charge and oxide charge densities of sputtered hafnium oxide (HfO2) films were investigated systematically. We found that both interface and oxide charge densities are strongly governed by tbe post-deposition annealing (PDA) conditions but have different dependencies. Tbe interface trap density can be reduced by more than one order of magnitude to a value close to that of the Si/SiO2 interface after proper (> 600 °C) annealing. This effect is due to the formation of SiO2 at Ihe HfO2/Si interface. However, PDA has a negative impact on the oxide charge density. The PDA-induced oxide charge generation is attributed to the grain boundary interface states because of the crystallization of the HfO2 at temperature greater than 650 °C.

KW - Dielectric film

KW - Hafnium oxide

KW - High-κ

KW - MOS devices

KW - Oxide trap

KW - Reliability

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M3 - RGC 32 - Refereed conference paper (with host publication)

SN - 0780377494

SN - 9780780377493

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BT - 2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003

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T2 - 2003 IEEE Conference on Electron Devices and Solid-State Circuits

Y2 - 16 December 2003 through 18 December 2003

ER -

Effects of rapid thermal annealing on the interface and oxide trap distributions in hafnium oxide films

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