Effects of rapid quenching on the impurity site location in Zn-diffused InP

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

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Author(s)

  • W. Walukiewicz
  • L. Y. Chan
  • R. Leon
  • E. E. Haller
  • J. M. Jaklevic
  • C. M. Hanson

Detail(s)

Original languageEnglish
Pages (from-to)86-90
Journal / PublicationJournal of Applied Physics
Volume74
Issue number1
Publication statusPublished - 1993
Externally publishedYes

Abstract

The lattice locations of Zn atoms in heavily Zn-doped InP single crystal have been investigated by ion channeling techniques. The InP samples were rapidly quenched in diffusion pump oil after high-temperature Zn diffusion. Ion channeling experiments performed along various major crystal axes suggest that a large fraction (20%-30%) of the Zn atoms are in the tetrahedral interstitial position in the InP lattice. It has been found that although the maximum hole concentration is not significantly affected by the cooling rate, there is a substantial increase in the incorporation of Zn on substitutional and tetrahedral interstitial lattice locations in the rapidly cooled samples as compared to the slowly cooled samples. The consequences of these results for understanding the mechanisms leading to the saturation of the free-hole concentration in compound semiconductors are discussed.

Citation Format(s)

Effects of rapid quenching on the impurity site location in Zn-diffused InP. / Yu, Kin Man; Walukiewicz, W.; Chan, L. Y. et al.
In: Journal of Applied Physics, Vol. 74, No. 1, 1993, p. 86-90.

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review