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Effects of pressure on the band structure of highly mismatched Zn1-yMnyOxTe1-x alloys

  • W. Shan*
  • , K. M. Yu
  • , W. Walukiewicz
  • , J. W. Beeman
  • , J. Wu
  • , J. W. Ager III
  • , M. A. Scarpulla
  • , O. D. Dubon
  • , E. E. Haller
  • *Corresponding author for this work

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

Abstract

The effect of pressure on the electronic band structure of Zn1-yMnyOxTe1-x alloys was studied by investigating the optical transitions associated with the Τ point at the conduction-band and the valence-band edges. The Zn1-yMnyOxTe1-x samples were found to exhibit a classical band-anticrossing behavior with the formation of two conduction subbands resulting from the strong interaction between the extended conduction-band states of Zn1-yMnyTe and the localized O states. By examining the effect of applied pressure on the E_ transition, the energetic position of ED=EV+2.0±0.1 eV for the localized O level and its pressure dependence of 0.6±0.1 meV/kbar were derived from the experimental results.
Original languageEnglish
Pages (from-to)924-926
JournalApplied Physics Letters
Volume84
Issue number6
DOIs
Publication statusPublished - 9 Feb 2004
Externally publishedYes

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