Abstract
The effect of pressure on the electronic band structure of Zn1-yMnyOxTe1-x alloys was studied by investigating the optical transitions associated with the Τ point at the conduction-band and the valence-band edges. The Zn1-yMnyOxTe1-x samples were found to exhibit a classical band-anticrossing behavior with the formation of two conduction subbands resulting from the strong interaction between the extended conduction-band states of Zn1-yMnyTe and the localized O states. By examining the effect of applied pressure on the E_ transition, the energetic position of ED=EV+2.0±0.1 eV for the localized O level and its pressure dependence of 0.6±0.1 meV/kbar were derived from the experimental results.
| Original language | English |
|---|---|
| Pages (from-to) | 924-926 |
| Journal | Applied Physics Letters |
| Volume | 84 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 9 Feb 2004 |
| Externally published | Yes |
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