Effects of point defects on thermal and thermoelectric properties of InN

A. X. Levander; T. Tong; K. M. Yu; J. Suh; D. Fu; R. Zhang; H. Lu; W. J. Schaff; O. Dubon; W. Walukiewicz; D. G. Cahill; J. Wu

doi:10.1063/1.3536507

Author(s)

A. X. Levander
T. Tong
J. Suh
D. Fu
R. Zhang
H. Lu
W. J. Schaff
O. Dubon
W. Walukiewicz
D. G. Cahill
J. Wu

Detail(s)

Original language	English
Article number	12108
Journal / Publication	Applied Physics Letters
Volume	98
Issue number	1
Publication status	Published - 3 Jan 2011
Externally published	Yes

Link(s)

DOI	DOI https://doi.org/10.1063/1.3536507 Final Published version
	Check@CityULib
Link to Scopus	https://www.scopus.com/record/display.uri?eid=2-s2.0-78651272938&origin=recordpage
Permanent Link	https://scholars.cityu.edu.hk/en/publications/publication(0be9fa4e-8816-450e-bb83-3722bb1c72f3).html

Abstract

In contrast to most semiconductors, electrical conductivity of InN is known to increase upon high-energy particle irradiation. The effects of irradiation on its thermal and thermoelectric properties have yet to be investigated. Here we report the thermal conductivity of high-quality InN to be 120 W/m K and examine the effects of point defects generated by irradiation on the thermal conductivity and Seebeck coefficient. We show that irradiation can be used to modulate the thermal and thermoelectric properties of InN by controlling point defect concentrations. The thermoelectric figure of merit of InN was found to be insensitive to irradiation. © 2011 American Institute of Physics.

Citation Format(s)

[ RIS ] [ BibTeX ]

Effects of point defects on thermal and thermoelectric properties of InN. / Levander, A. X.; Tong, T.; Yu, K. M. et al.
In: Applied Physics Letters, Vol. 98, No. 1, 12108, 03.01.2011.

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

Levander, AX, Tong, T, Yu, KM, Suh, J, Fu, D, Zhang, R, Lu, H, Schaff, WJ, Dubon, O, Walukiewicz, W, Cahill, DG & Wu, J 2011, 'Effects of point defects on thermal and thermoelectric properties of InN', Applied Physics Letters, vol. 98, no. 1, 12108. https://doi.org/10.1063/1.3536507

Levander, A. X., Tong, T., Yu, K. M., Suh, J., Fu, D., Zhang, R., Lu, H., Schaff, W. J., Dubon, O., Walukiewicz, W., Cahill, D. G., & Wu, J. (2011). Effects of point defects on thermal and thermoelectric properties of InN. Applied Physics Letters, 98(1), Article 12108. https://doi.org/10.1063/1.3536507

Levander AX, Tong T, Yu KM, Suh J, Fu D, Zhang R et al. Effects of point defects on thermal and thermoelectric properties of InN. Applied Physics Letters. 2011 Jan 3;98(1):12108. doi: 10.1063/1.3536507

Levander, A. X. ; Tong, T. ; Yu, K. M. et al. / Effects of point defects on thermal and thermoelectric properties of InN. In: Applied Physics Letters. 2011 ; Vol. 98, No. 1.