Abstract
The effects of plasma hydrogenation on the fabrication of nanocrystalline cubic silicon carbide (SiC) thin films on Si (100) are investigated. Our results indicate that plasma hydrogenation is an effective method to reduce the deposition temperature and to improve the composition and microstructure of the cubic SiC (β-SiC) thin films. In particular, the crystal particle size and the oxygen diffusion can be controlled. The mechanism is discussed. © 2006 Elsevier B.V. All rights reserved.
| Original language | English |
|---|---|
| Pages (from-to) | 826-830 |
| Journal | Diamond and Related Materials |
| Volume | 16 |
| Issue number | 4-7 SPEC. ISS. |
| DOIs | |
| Publication status | Published - Apr 2007 |
Research Keywords
- Film
- PECVD
- Plasma hydrogenation
- SiC
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