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Effects of plasma hydrogenation on low temperature growth of nanocrystalline cubic SiC thin films

M. Wang, A. P. Huang, Paul K. Chu, B. Wang, H. Yan

    Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

    Abstract

    The effects of plasma hydrogenation on the fabrication of nanocrystalline cubic silicon carbide (SiC) thin films on Si (100) are investigated. Our results indicate that plasma hydrogenation is an effective method to reduce the deposition temperature and to improve the composition and microstructure of the cubic SiC (β-SiC) thin films. In particular, the crystal particle size and the oxygen diffusion can be controlled. The mechanism is discussed. © 2006 Elsevier B.V. All rights reserved.
    Original languageEnglish
    Pages (from-to)826-830
    JournalDiamond and Related Materials
    Volume16
    Issue number4-7 SPEC. ISS.
    DOIs
    Publication statusPublished - Apr 2007

    Research Keywords

    • Film
    • PECVD
    • Plasma hydrogenation
    • SiC

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