Effects of non-fatal electrostatic discharge on the threshold voltage degradation in nano CMOS devices

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)Letterpeer-review

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Detail(s)

Original languageEnglish
Article number129403
Journal / PublicationScience China Information Sciences
Volume65
Issue number2
Online published9 Aug 2021
Publication statusOnline published - 9 Aug 2021

Research Area(s)

  • Nano CMOS, ESD, Reliability, Hot-carrier, Charge trapping

Bibliographic Note

Information for this record is supplemented by the author(s) concerned.