Effects of non-fatal electrostatic discharge on the threshold voltage degradation in nano CMOS devices

Research output: Journal Publications and Reviews › Letter › peer-review

Overview

3 Scopus Citations

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Author(s)

Hei WONG
Shurong DONG
Zehua CHEN

Related Research Unit(s)

Department of Electrical Engineering

Detail(s)

Original language	English
Article number	129403
Pages (from-to)	1-2
Number of pages	2
Journal / Publication	Science China Information Sciences
Volume	65
Issue number	2
Online published	9 Aug 2021
Publication status	Published - Feb 2022

Link(s)

DOI	DOI https://doi.org/10.1007/s11432-020-3197-8 Final Published version
	Check@CityULib
Link to Scopus	https://www.scopus.com/record/display.uri?eid=2-s2.0-85112397579&origin=recordpage
Permanent Link	https://scholars.cityu.edu.hk/en/publications/publication(c8e2acf4-a79f-4d9f-b7b9-0aeabb67b821).html

Research Area(s)

Nano CMOS, ESD, Reliability, Hot-carrier, Charge trapping

Bibliographic Note

Information for this record is supplemented by the author(s) concerned.

Citation Format(s)

[ RIS ] [ BibTeX ]

Effects of non-fatal electrostatic discharge on the threshold voltage degradation in nano CMOS devices. / WONG, Hei; DONG, Shurong; CHEN, Zehua.
In: Science China Information Sciences, Vol. 65, No. 2, 129403, 02.2022, p. 1-2.

Research output: Journal Publications and Reviews › Letter › peer-review

WONG, H, DONG, S & CHEN, Z 2022, 'Effects of non-fatal electrostatic discharge on the threshold voltage degradation in nano CMOS devices', Science China Information Sciences, vol. 65, no. 2, 129403, pp. 1-2. https://doi.org/10.1007/s11432-020-3197-8

WONG, H., DONG, S., & CHEN, Z. (2022). Effects of non-fatal electrostatic discharge on the threshold voltage degradation in nano CMOS devices. Science China Information Sciences, 65(2), 1-2. Article 129403. https://doi.org/10.1007/s11432-020-3197-8

WONG H, DONG S, CHEN Z. Effects of non-fatal electrostatic discharge on the threshold voltage degradation in nano CMOS devices. Science China Information Sciences. 2022 Feb;65(2):1-2. 129403. Epub 2021 Aug 9. doi: 10.1007/s11432-020-3197-8

WONG, Hei ; DONG, Shurong ; CHEN, Zehua. / Effects of non-fatal electrostatic discharge on the threshold voltage degradation in nano CMOS devices. In: Science China Information Sciences. 2022 ; Vol. 65, No. 2. pp. 1-2.