Effects of native defects on properties of low temperature grown, non-stoichiomtric gallium nitride

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

6 Scopus Citations
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Author(s)

  • Min Ting
  • S. V. Novikov
  • Clement Collin
  • W. L. Sarney
  • S. P. Svensson
  • A. V. Luce
  • J. D. Denlinger
  • W. Walukiewicz
  • C. T. Foxon

Detail(s)

Original languageEnglish
Article number385101
Journal / PublicationJournal of Physics D: Applied Physics
Volume48
Issue number38
Publication statusPublished - 30 Sep 2015

Abstract

The properties of GaN thin films grown by molecular beam epitaxy at temperatures from 80 to 500 °C under a wide range of Ga:N flux ratios are studied. We found that at growth temperatures as low as ∼80 °C, GaN films still have a polycrystalline, columnar morphology with c-axis preferred orientation. Soft x-ray absorption and emission and optical absorption measurements on Ga-rich samples suggest the presence of a partially occupied GaN antisite defect band located at ∼1.2 eV below the conduction band minimum. P-type conductivity observed in this LTMBE Ga-rich GaN is consistent with transport within this partially occupied defect band.

Research Area(s)

  • gallium nitride, low temperature MBE, native defects, non-stoichiometry, optical properties

Citation Format(s)

Effects of native defects on properties of low temperature grown, non-stoichiomtric gallium nitride. / Yu, K. M.; Ting, Min; Novikov, S. V.; Collin, Clement; Sarney, W. L.; Svensson, S. P.; Luce, A. V.; Denlinger, J. D.; Walukiewicz, W.; Foxon, C. T.

In: Journal of Physics D: Applied Physics, Vol. 48, No. 38, 385101, 30.09.2015.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review