Effects of native defects on properties of low temperature grown, non-stoichiomtric gallium nitride

K. M. Yu; Min Ting; S. V. Novikov; Clement Collin; W. L. Sarney; S. P. Svensson; A. V. Luce; J. D. Denlinger; W. Walukiewicz; C. T. Foxon

doi:10.1088/0022-3727/48/38/385101

Effects of native defects on properties of low temperature grown, non-stoichiomtric gallium nitride

K. M. Yu^*
, Min Ting
, S. V. Novikov
, Clement Collin
, W. L. Sarney
, S. P. Svensson
, A. V. Luce
, J. D. Denlinger
, W. Walukiewicz
, C. T. Foxon

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

10 Citations (Scopus)

Abstract

The properties of GaN thin films grown by molecular beam epitaxy at temperatures from 80 to 500 °C under a wide range of Ga:N flux ratios are studied. We found that at growth temperatures as low as ∼80 °C, GaN films still have a polycrystalline, columnar morphology with c-axis preferred orientation. Soft x-ray absorption and emission and optical absorption measurements on Ga-rich samples suggest the presence of a partially occupied Ga_N antisite defect band located at ∼1.2 eV below the conduction band minimum. P-type conductivity observed in this LTMBE Ga-rich GaN is consistent with transport within this partially occupied defect band. © 2015 IOP Publishing Ltd

Original language	English
Article number	385101
Journal	Journal of Physics D: Applied Physics
Volume	48
Issue number	38
Online published	25 Aug 2015
DOIs	https://doi.org/10.1088/0022-3727/48/38/385101
Publication status	Published - 30 Sept 2015

Research Keywords

gallium nitride
low temperature MBE
native defects
non-stoichiometry
optical properties

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@article{74e4522cb6b5413d847dcb33aa43651a,

title = "Effects of native defects on properties of low temperature grown, non-stoichiomtric gallium nitride",

abstract = "The properties of GaN thin films grown by molecular beam epitaxy at temperatures from 80 to 500 °C under a wide range of Ga:N flux ratios are studied. We found that at growth temperatures as low as ∼80 °C, GaN films still have a polycrystalline, columnar morphology with c-axis preferred orientation. Soft x-ray absorption and emission and optical absorption measurements on Ga-rich samples suggest the presence of a partially occupied GaN antisite defect band located at ∼1.2 eV below the conduction band minimum. P-type conductivity observed in this LTMBE Ga-rich GaN is consistent with transport within this partially occupied defect band. {\textcopyright} 2015 IOP Publishing Ltd",

keywords = "gallium nitride, low temperature MBE, native defects, non-stoichiometry, optical properties",

author = "Yu, \{K. M.\} and Min Ting and Novikov, \{S. V.\} and Clement Collin and Sarney, \{W. L.\} and Svensson, \{S. P.\} and Luce, \{A. V.\} and Denlinger, \{J. D.\} and W. Walukiewicz and Foxon, \{C. T.\}",

year = "2015",

month = sep,

day = "30",

doi = "10.1088/0022-3727/48/38/385101",

language = "English",

volume = "48",

journal = "Journal of Physics D: Applied Physics",

issn = "0022-3727",

publisher = "Institute of Physics",

number = "38",

}

TY - JOUR

T1 - Effects of native defects on properties of low temperature grown, non-stoichiomtric gallium nitride

AU - Yu, K. M.

AU - Ting, Min

AU - Novikov, S. V.

AU - Collin, Clement

AU - Sarney, W. L.

AU - Svensson, S. P.

AU - Luce, A. V.

AU - Denlinger, J. D.

AU - Walukiewicz, W.

AU - Foxon, C. T.

PY - 2015/9/30

Y1 - 2015/9/30

N2 - The properties of GaN thin films grown by molecular beam epitaxy at temperatures from 80 to 500 °C under a wide range of Ga:N flux ratios are studied. We found that at growth temperatures as low as ∼80 °C, GaN films still have a polycrystalline, columnar morphology with c-axis preferred orientation. Soft x-ray absorption and emission and optical absorption measurements on Ga-rich samples suggest the presence of a partially occupied GaN antisite defect band located at ∼1.2 eV below the conduction band minimum. P-type conductivity observed in this LTMBE Ga-rich GaN is consistent with transport within this partially occupied defect band. © 2015 IOP Publishing Ltd

AB - The properties of GaN thin films grown by molecular beam epitaxy at temperatures from 80 to 500 °C under a wide range of Ga:N flux ratios are studied. We found that at growth temperatures as low as ∼80 °C, GaN films still have a polycrystalline, columnar morphology with c-axis preferred orientation. Soft x-ray absorption and emission and optical absorption measurements on Ga-rich samples suggest the presence of a partially occupied GaN antisite defect band located at ∼1.2 eV below the conduction band minimum. P-type conductivity observed in this LTMBE Ga-rich GaN is consistent with transport within this partially occupied defect band. © 2015 IOP Publishing Ltd

KW - gallium nitride

KW - low temperature MBE

KW - native defects

KW - non-stoichiometry

KW - optical properties

UR - https://www.scopus.com/pages/publications/84941254234

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-84941254234&origin=recordpage

U2 - 10.1088/0022-3727/48/38/385101

DO - 10.1088/0022-3727/48/38/385101

M3 - RGC 21 - Publication in refereed journal

SN - 0022-3727

VL - 48

JO - Journal of Physics D: Applied Physics

JF - Journal of Physics D: Applied Physics

IS - 38

M1 - 385101

ER -

Effects of native defects on properties of low temperature grown, non-stoichiomtric gallium nitride

Abstract

Research Keywords

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