Effects of N20 Anneal and Reoxidation on Thermal Oxide Characteristics

Zhihong Liu; Hsing Jen Wann; Chenming Hu; Ping Ko; Yiu Chung Cheng

doi:10.1109/55.192772

Effects of N20 Anneal and Reoxidation on Thermal Oxide Characteristics

Zhihong Liu
, Hsing Jen Wann
, Chenming Hu
, Ping Ko
, Yiu Chung Cheng

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

70 Citations (Scopus)

Abstract

The effects of post-oxidation N₂O anneal on conventional thermal oxide are studied. The oxide thickness increase resulting from N₂O anneal is found to be self-limiting and insensitive to initial oxide thickness, which makes the thickness of the resulting oxide easy to control. The N₂O anneal leads to increased resistance against injection-induced interface-state generation and to reduced hole trapping. No further quality improvement is found when the N₂O-annealed oxide is subject to an additional reoxidation. This finding confirms that nitrogen incorporation in the absence of hydrogen is responsible for improving the quality of the conventional oxides. © 1992 IEEE

Original language	English
Pages (from-to)	402-404
Journal	IEEE Electron Device Letters
Volume	13
Issue number	8
DOIs	https://doi.org/10.1109/55.192772
Publication status	Published - Aug 1992

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Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

Funding

This work was supported in part by the UPGC Research Grant of Hong Kong.

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@article{b803595b44b5437abaa15fb67f2d40bb,

title = "Effects of N20 Anneal and Reoxidation on Thermal Oxide Characteristics",

abstract = "The effects of post-oxidation N2O anneal on conventional thermal oxide are studied. The oxide thickness increase resulting from N2O anneal is found to be self-limiting and insensitive to initial oxide thickness, which makes the thickness of the resulting oxide easy to control. The N2O anneal leads to increased resistance against injection-induced interface-state generation and to reduced hole trapping. No further quality improvement is found when the N2O-annealed oxide is subject to an additional reoxidation. This finding confirms that nitrogen incorporation in the absence of hydrogen is responsible for improving the quality of the conventional oxides. {\textcopyright} 1992 IEEE",

author = "Zhihong Liu and Wann, \{Hsing Jen\} and Chenming Hu and Ping Ko and Cheng, \{Yiu Chung\}",

note = "Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].",

year = "1992",

month = aug,

doi = "10.1109/55.192772",

language = "English",

volume = "13",

pages = "402--404",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "IEEE",

number = "8",

}

TY - JOUR

T1 - Effects of N20 Anneal and Reoxidation on Thermal Oxide Characteristics

AU - Liu, Zhihong

AU - Wann, Hsing Jen

AU - Hu, Chenming

AU - Ko, Ping

AU - Cheng, Yiu Chung

N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

PY - 1992/8

Y1 - 1992/8

N2 - The effects of post-oxidation N2O anneal on conventional thermal oxide are studied. The oxide thickness increase resulting from N2O anneal is found to be self-limiting and insensitive to initial oxide thickness, which makes the thickness of the resulting oxide easy to control. The N2O anneal leads to increased resistance against injection-induced interface-state generation and to reduced hole trapping. No further quality improvement is found when the N2O-annealed oxide is subject to an additional reoxidation. This finding confirms that nitrogen incorporation in the absence of hydrogen is responsible for improving the quality of the conventional oxides. © 1992 IEEE

AB - The effects of post-oxidation N2O anneal on conventional thermal oxide are studied. The oxide thickness increase resulting from N2O anneal is found to be self-limiting and insensitive to initial oxide thickness, which makes the thickness of the resulting oxide easy to control. The N2O anneal leads to increased resistance against injection-induced interface-state generation and to reduced hole trapping. No further quality improvement is found when the N2O-annealed oxide is subject to an additional reoxidation. This finding confirms that nitrogen incorporation in the absence of hydrogen is responsible for improving the quality of the conventional oxides. © 1992 IEEE

UR - https://www.scopus.com/pages/publications/0026908550

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0026908550&origin=recordpage

U2 - 10.1109/55.192772

DO - 10.1109/55.192772

M3 - RGC 21 - Publication in refereed journal

SN - 0741-3106

VL - 13

SP - 402

EP - 404

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 8

ER -

Effects of N20 Anneal and Reoxidation on Thermal Oxide Characteristics

Abstract

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