Effects of Mn site Location on the magnetic properties of III 1-xMn xV semiconductors

K. M. Yu; W. Walukiewicz; T. Wojtowicz; J. Denlinger; X. Liu; J. K. Furdyna

doi:10.1063/1.1994111

Effects of Mn site Location on the magnetic properties of III _1-xMn _xV semiconductors

K. M. Yu, W. Walukiewicz, T. Wojtowicz, J. Denlinger, X. Liu, J. K. Furdyna

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

Abstract

We have demonstrated that in ferromagnetic III _1-xMn _xV semiconductor alloys grown by low temperature molecular beam epitaxy technique, a substantial fraction of the Mn atoms reside in interstitial positions (Mn ₁). The Mn ₁ lower the Curie temperature by electrically compensating Mn _Ga acceptors and reducing magnetically active spins. Through a series of experiments that involve varying the film thickness, low temperature annealing, co-doping with Be, as well as modulation doped Al _1-yGa _yAs/Ga _1-xMn _xAs/Al _1-yGa _yAs heterostructures, we established that the fraction of Mn intersititials present in the thin film is governed by the Fermi level during the growth process itself. This Fermi-level-induced Mn interstitial formation effect imposes an upper limit to the T _C of III _1-xMn _xV alloys. © 2005 American Institute of Physics.

Original language	English
Title of host publication	AIP Conference Proceedings
Pages	303-306
Volume	772
DOIs	https://doi.org/10.1063/1.1994111
Publication status	Published - 30 Jun 2005
Externally published	Yes
Event	27th International Conference on the Physics of Semiconductors (ICPS 27) - Flagstaff, AZ, United States Duration: 26 Jul 2004 → 30 Jul 2004

Publication series

Name
Volume	772
ISSN (Print)	0094-243X
ISSN (Electronic)	1551-7616

Conference

Conference	27th International Conference on the Physics of Semiconductors (ICPS 27)
Place	United States
City	Flagstaff, AZ
Period	26/07/04 → 30/07/04

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@inproceedings{bfb7b1c04bdc4c4eb04c2c849373c626,

title = "Effects of Mn site Location on the magnetic properties of III 1-xMn xV semiconductors",

abstract = "We have demonstrated that in ferromagnetic III 1-xMn xV semiconductor alloys grown by low temperature molecular beam epitaxy technique, a substantial fraction of the Mn atoms reside in interstitial positions (Mn 1). The Mn 1 lower the Curie temperature by electrically compensating Mn Ga acceptors and reducing magnetically active spins. Through a series of experiments that involve varying the film thickness, low temperature annealing, co-doping with Be, as well as modulation doped Al 1-yGa yAs/Ga 1-xMn xAs/Al 1-yGa yAs heterostructures, we established that the fraction of Mn intersititials present in the thin film is governed by the Fermi level during the growth process itself. This Fermi-level-induced Mn interstitial formation effect imposes an upper limit to the T C of III 1-xMn xV alloys. {\textcopyright} 2005 American Institute of Physics.",

author = "Yu, {K. M.} and W. Walukiewicz and T. Wojtowicz and J. Denlinger and X. Liu and Furdyna, {J. K.}",

year = "2005",

month = jun,

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doi = "10.1063/1.1994111",

language = "English",

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T1 - Effects of Mn site Location on the magnetic properties of III 1-xMn xV semiconductors

AU - Yu, K. M.

AU - Walukiewicz, W.

AU - Wojtowicz, T.

AU - Denlinger, J.

AU - Liu, X.

AU - Furdyna, J. K.

PY - 2005/6/30

Y1 - 2005/6/30

N2 - We have demonstrated that in ferromagnetic III 1-xMn xV semiconductor alloys grown by low temperature molecular beam epitaxy technique, a substantial fraction of the Mn atoms reside in interstitial positions (Mn 1). The Mn 1 lower the Curie temperature by electrically compensating Mn Ga acceptors and reducing magnetically active spins. Through a series of experiments that involve varying the film thickness, low temperature annealing, co-doping with Be, as well as modulation doped Al 1-yGa yAs/Ga 1-xMn xAs/Al 1-yGa yAs heterostructures, we established that the fraction of Mn intersititials present in the thin film is governed by the Fermi level during the growth process itself. This Fermi-level-induced Mn interstitial formation effect imposes an upper limit to the T C of III 1-xMn xV alloys. © 2005 American Institute of Physics.

AB - We have demonstrated that in ferromagnetic III 1-xMn xV semiconductor alloys grown by low temperature molecular beam epitaxy technique, a substantial fraction of the Mn atoms reside in interstitial positions (Mn 1). The Mn 1 lower the Curie temperature by electrically compensating Mn Ga acceptors and reducing magnetically active spins. Through a series of experiments that involve varying the film thickness, low temperature annealing, co-doping with Be, as well as modulation doped Al 1-yGa yAs/Ga 1-xMn xAs/Al 1-yGa yAs heterostructures, we established that the fraction of Mn intersititials present in the thin film is governed by the Fermi level during the growth process itself. This Fermi-level-induced Mn interstitial formation effect imposes an upper limit to the T C of III 1-xMn xV alloys. © 2005 American Institute of Physics.

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DO - 10.1063/1.1994111

M3 - RGC 32 - Refereed conference paper (with host publication)

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BT - AIP Conference Proceedings

T2 - 27th International Conference on the Physics of Semiconductors (ICPS 27)

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