EFFECTS OF ION SPECIES AND ADSORBED GAS ON DRY ETCHING INDUCED DAMAGE IN GaAs.

Research output: Chapters, Conference Papers, Creative and Literary Works (RGC: 12, 32, 41, 45)32_Refereed conference paper (with ISBN/ISSN)

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Author(s)

Detail(s)

Original languageEnglish
Title of host publicationProceedings Of The 1984 International Symposium On Electron, Ion, And Photon Beams, 29 May - 1 June 1984, Tarrytown, N.Y
Pages398-401
Volume3
Publication statusPublished - Jan 1984
Externally publishedYes

Publication series

NameJournal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
Volume3
ISSN (Electronic)0734-211X

Conference

TitleProc of the 1984 Int Symp on Electron, Ion, and Photon Beams
CityTarrytown, NY, USA
Period29 May - 1 June 1984

Abstract

Damage induced in GaAs by ion-beam etching and ion-beam-assisted etching was found to be affected by ion energy, ion mass, and adsorbed gas on the sample surfaces during etching. The etching characteristics of Ne, Ar, and Xe ions with energies ranging from 250 to 2000 ev were studied. The effect of gas adsorption was investigated by using Cl//2 (reactive gas for GaAs) and NO//2 (nonreactive gas for GaAs) with gas fluxes equivalent to pressures between 2 and 50 multiplied by 10** minus **4 Torr. Dry etching induced damage was evaluated by measuring electrical characteristics of Schottky diodes fabricated on the etched GaAs surfaces. The results indicated that damage in GaAs can be minimized by reducing the ion penetration distance into the substrate by using low ion energy and heavy ion species, and by introducing adsorbed gas, such as Cl//2 or NO//2, on the sample surface as a protective layer.

Citation Format(s)

EFFECTS OF ION SPECIES AND ADSORBED GAS ON DRY ETCHING INDUCED DAMAGE IN GaAs. / Pang, S. W.; Geis, M. W.; Efremow, N. N.; Lincoln, G. A.

Proceedings Of The 1984 International Symposium On Electron, Ion, And Photon Beams, 29 May - 1 June 1984, Tarrytown, N.Y. Vol. 3 1984. p. 398-401 (Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena; Vol. 3).

Research output: Chapters, Conference Papers, Creative and Literary Works (RGC: 12, 32, 41, 45)32_Refereed conference paper (with ISBN/ISSN)