TY - GEN
T1 - EFFECTS OF ION SPECIES AND ADSORBED GAS ON DRY ETCHING INDUCED DAMAGE IN GaAs.
AU - Pang, S. W.
AU - Geis, M. W.
AU - Efremow, N. N.
AU - Lincoln, G. A.
PY - 1984/1
Y1 - 1984/1
N2 - Damage induced in GaAs by ion-beam etching and ion-beam-assisted etching was found to be affected by ion energy, ion mass, and adsorbed gas on the sample surfaces during etching. The etching characteristics of Ne, Ar, and Xe ions with energies ranging from 250 to 2000 ev were studied. The effect of gas adsorption was investigated by using Cl//2 (reactive gas for GaAs) and NO//2 (nonreactive gas for GaAs) with gas fluxes equivalent to pressures between 2 and 50 multiplied by 10** minus **4 Torr. Dry etching induced damage was evaluated by measuring electrical characteristics of Schottky diodes fabricated on the etched GaAs surfaces. The results indicated that damage in GaAs can be minimized by reducing the ion penetration distance into the substrate by using low ion energy and heavy ion species, and by introducing adsorbed gas, such as Cl//2 or NO//2, on the sample surface as a protective layer.
AB - Damage induced in GaAs by ion-beam etching and ion-beam-assisted etching was found to be affected by ion energy, ion mass, and adsorbed gas on the sample surfaces during etching. The etching characteristics of Ne, Ar, and Xe ions with energies ranging from 250 to 2000 ev were studied. The effect of gas adsorption was investigated by using Cl//2 (reactive gas for GaAs) and NO//2 (nonreactive gas for GaAs) with gas fluxes equivalent to pressures between 2 and 50 multiplied by 10** minus **4 Torr. Dry etching induced damage was evaluated by measuring electrical characteristics of Schottky diodes fabricated on the etched GaAs surfaces. The results indicated that damage in GaAs can be minimized by reducing the ion penetration distance into the substrate by using low ion energy and heavy ion species, and by introducing adsorbed gas, such as Cl//2 or NO//2, on the sample surface as a protective layer.
UR - https://www.scopus.com/pages/publications/0021141148
UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0021141148&origin=recordpage
U2 - 10.1116/1.583272
DO - 10.1116/1.583272
M3 - RGC 32 - Refereed conference paper (with host publication)
SN - 883184648
VL - 3
T3 - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
SP - 398
EP - 401
BT - Proceedings Of The 1984 International Symposium On Electron, Ion, And Photon Beams, 29 May - 1 June 1984, Tarrytown, N.Y
T2 - Proc of the 1984 Int Symp on Electron, Ion, and Photon Beams
Y2 - 29 May 1984 through 1 June 1984
ER -