Effects of interface reactions on electrical characteristics of metal-GaAs contacts

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal

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Author(s)

  • K. M. Yu
  • W. Walukiewicz
  • J. M. Jaklevic
  • E. E. Haller
  • T. Sands

Detail(s)

Original languageEnglish
Pages (from-to)189-191
Journal / PublicationApplied Physics Letters
Volume51
Issue number3
Publication statusPublished - 1987
Externally publishedYes

Abstract

Solid-state interface reactions between metal thin films and (100) GaAs substrates at elevated temperatures are studied by conventional and heavy-ion Rutherford backscattering spectrometry, x-ray diffraction, and transmission electron microscopy. Metals investigated in this study include Pt, Pd, Ni, Co, Rh, and W. Electrical properties of the metal/n-GaAs diodes undergoing annealing treatments at various temperatures were also measured with the current-voltage dependence. Optimum diodes with maximum barrier heights as well as minimum leakage currents are obtained for diodes annealed at temperatures at which a uniform thin layer of reacted phase is observable at the interface. The barrier heights of the optimum diodes show a linear dependence on the work functions of the various metals. The range of these barrier heights is limited by nonstoichiometry related defects as suggested by a recently proposed amphoteric native defect model.

Citation Format(s)

Effects of interface reactions on electrical characteristics of metal-GaAs contacts. / Yu, K. M.; Walukiewicz, W.; Jaklevic, J. M.; Haller, E. E.; Sands, T.

In: Applied Physics Letters, Vol. 51, No. 3, 1987, p. 189-191.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal