Effects of graphene defect on electronic structures of its interface with organic semiconductor

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • Qing-Dan Yang
  • Wei-Dong Dou
  • Chundong Wang
  • Hin-Wai Mo
  • Ming-Fai Lo
  • Muk Fung Yuen
  • Tsz-Wai Ng

Detail(s)

Original languageEnglish
Pages (from-to)133502 -
Journal / PublicationApplied Physics Letters
Volume106
Issue number13
Publication statusPublished - 30 Mar 2015

Link(s)

Abstract

Electronic structures of copper hexadecafluorophthalocyanine (F16CuPc)/graphene with different defect density were studied with ultra-violet photoelectron spectroscopy. We showed that the charge transfer interaction and charge flow direction can be interestingly tuned by controlling the defect density of graphene through time-controlled H-2 plasma treatment. By increasing the treatment time of H2 plasma from 30 s to 5 min, both the interface surface dipole and the electron transporting barrier at F16CuPc/graphene interface are significantly reduced from 0.86 to 0.56 eV and 0.71 to 0.29 eV, respectively. These results suggested that graphene's defect control is a simple approach for tuning electronic properties of organic/graphene interfaces. (C) 2015 AIP Publishing LLC.

Research Area(s)

Citation Format(s)

Effects of graphene defect on electronic structures of its interface with organic semiconductor. / Yang, Qing-Dan; Dou, Wei-Dong; Wang, Chundong et al.
In: Applied Physics Letters, Vol. 106, No. 13, 30.03.2015, p. 133502 -.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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