Effects of Eu interfacial mobility on the growth of epitaxial EuBa2Cu3O7-δ films
Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
Author(s)
Detail(s)
Original language | English |
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Article number | 101912 |
Pages (from-to) | 1-3 |
Journal / Publication | Applied Physics Letters |
Volume | 86 |
Issue number | 10 |
Online published | 4 Mar 2005 |
Publication status | Published - 7 Mar 2005 |
Externally published | Yes |
Link(s)
Abstract
By inserting a thin YBa2Cu3O7-δ (Y123) seed layer, high quality EuBa2Cu3O7-δ (Eu123) films can grow with epitaxial c-axis orientation on SrTiO3 (STO) substrate without increasing the growth temperature. The interfacial structures of Eu123/STO and Eu123/Y123/STO were investigated using scanning transmission electron microscopy. Results show that the Eu mobility on the STO substrate is very low at the regular deposition temperature. This leads to nonuniform composition distribution at the Eu123/STO interface and a mixture of c-axis and a-axis growth. A thin Y123 seed layer greatly improves the Eu mobility and therefore facilitates high quality c-axis growth. © 2005 American Institute of Physics.
Citation Format(s)
Effects of Eu interfacial mobility on the growth of epitaxial EuBa2Cu3O7-δ films. / Wang, H.; Liao, X. Z.; Xu, H. F. et al.
In: Applied Physics Letters, Vol. 86, No. 10, 101912, 07.03.2005, p. 1-3.Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review