Effects of electron cyclotron resonance etching on the ambient (100) GaAs surface

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • O. J. Glembocki
  • J. A. Tuchman
  • K. K. Ko
  • A. Giordana
  • R. Kaplan
  • C. E. Stutz

Detail(s)

Original languageEnglish
Journal / PublicationApplied Physics Letters
Volume66
Publication statusPublished - 1995
Externally publishedYes

Abstract

Photoreflectance has been used to study the electronic behavior of the ambient (100) GaAs surface and its modification by etching in a Cl 2/Ar plasma generated by an electron-cyclotron resonance (ECR) source. We observed two pinning positions for ambient (100) GaAs, with n-GaAs pinning near midgap and p-GaAs pinning near the valance band. ECR etching shifts the Fermi level of p-GaAs toward midgap, but has little effect on n-GaAs. The surface modification is most influenced by the rf power. Auger electron spectroscopy indicates that the etching increases As at the GaAs/oxide interface. We suggest that the Ga/As ratio controls the position of the Fermi level.© 1995 American Institute of Physics.

Citation Format(s)

Effects of electron cyclotron resonance etching on the ambient (100) GaAs surface. / Glembocki, O. J.; Tuchman, J. A.; Ko, K. K. et al.

In: Applied Physics Letters, Vol. 66, 1995.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review