Effects of buffer layers on the orientation and dielectric properties of Ba(Zr0.20Ti0.80)O3 thin films prepared by sol-gel method

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • L. N. Gao
  • S. N. Song
  • J. W. Zhai
  • X. Yao
  • Z. K. Xu

Detail(s)

Original languageEnglish
Pages (from-to)1245-1249
Journal / PublicationJournal of Crystal Growth
Volume310
Issue number6
Publication statusPublished - 15 Mar 2008

Abstract

Ba(Zr0.20Ti0.80)O3 (BZT) thin films were deposited on Pt(1 1 1)/Ti/SiO2/Si(1 0 0), LaNiO3 (LNO) and CeO2-buffered Pt(1 1 1)/Ti/SiO2/Si(1 0 0) substrates by sol-gel process. The BZT thin films directly grown on Pt(1 1 1)/Ti/SiO2/Si(1 0 0) substrates exhibited highly (1 1 1) preferred orientation, while the films deposited on Pt(1 1 1)/Ti/SiO2/Si(1 0 0) substrates with LNO and CeO2 buffer layers showed, respectively, highly (1 0 0) and (1 1 0) preferred orientation. At 1 MHz, the dielectric constants were 416, 465 and 245 for the BZT thin films grown on Pt(1 1 1)/Ti/SiO2/Si(1 0 0), LNO and CeO2-buffered Pt(1 1 1)/Ti/SiO2/Si(1 0 0) substrates, respectively. The difference in dielectric properties of these three kinds of BZT films may be attributed to the different grain sizes and various orientations. © 2008 Elsevier B.V. All rights reserved.

Research Area(s)

  • A1. Characterization, A1. Crystal structure, A1. X-ray diffraction, B1. Oxides, B2. Ferroelectric materials

Citation Format(s)

Effects of buffer layers on the orientation and dielectric properties of Ba(Zr0.20Ti0.80)O3 thin films prepared by sol-gel method. / Gao, L. N.; Song, S. N.; Zhai, J. W.; Yao, X.; Xu, Z. K.

In: Journal of Crystal Growth, Vol. 310, No. 6, 15.03.2008, p. 1245-1249.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review