Effects of buffer layers on the orientation and dielectric properties of Ba(Zr0.20Ti0.80)O3 thin films prepared by sol-gel method

L. N. Gao; S. N. Song; J. W. Zhai; X. Yao; Z. K. Xu

doi:10.1016/j.jcrysgro.2007.12.015

Effects of buffer layers on the orientation and dielectric properties of Ba(Zr0.20Ti0.80)O3 thin films prepared by sol-gel method

L. N. Gao
, S. N. Song
, J. W. Zhai
, X. Yao
, Z. K. Xu

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

21 Citations (Scopus)

Abstract

Ba(Zr_0.20Ti_0.80)O₃ (BZT) thin films were deposited on Pt(1 1 1)/Ti/SiO₂/Si(1 0 0), LaNiO₃ (LNO) and CeO₂-buffered Pt(1 1 1)/Ti/SiO₂/Si(1 0 0) substrates by sol-gel process. The BZT thin films directly grown on Pt(1 1 1)/Ti/SiO₂/Si(1 0 0) substrates exhibited highly (1 1 1) preferred orientation, while the films deposited on Pt(1 1 1)/Ti/SiO₂/Si(1 0 0) substrates with LNO and CeO₂ buffer layers showed, respectively, highly (1 0 0) and (1 1 0) preferred orientation. At 1 MHz, the dielectric constants were 416, 465 and 245 for the BZT thin films grown on Pt(1 1 1)/Ti/SiO₂/Si(1 0 0), LNO and CeO₂-buffered Pt(1 1 1)/Ti/SiO₂/Si(1 0 0) substrates, respectively. The difference in dielectric properties of these three kinds of BZT films may be attributed to the different grain sizes and various orientations. © 2008 Elsevier B.V. All rights reserved.

Original language	English
Pages (from-to)	1245-1249
Journal	Journal of Crystal Growth
Volume	310
Issue number	6
DOIs	https://doi.org/10.1016/j.jcrysgro.2007.12.015
Publication status	Published - 15 Mar 2008

Research Keywords

A1. Characterization
A1. Crystal structure
A1. X-ray diffraction
B1. Oxides
B2. Ferroelectric materials

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10.1016/j.jcrysgro.2007.12.015

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@article{aeb56ec7a3614b1a98b2bd6fc4f11483,

title = "Effects of buffer layers on the orientation and dielectric properties of Ba(Zr0.20Ti0.80)O3 thin films prepared by sol-gel method",

abstract = "Ba(Zr0.20Ti0.80)O3 (BZT) thin films were deposited on Pt(1 1 1)/Ti/SiO2/Si(1 0 0), LaNiO3 (LNO) and CeO2-buffered Pt(1 1 1)/Ti/SiO2/Si(1 0 0) substrates by sol-gel process. The BZT thin films directly grown on Pt(1 1 1)/Ti/SiO2/Si(1 0 0) substrates exhibited highly (1 1 1) preferred orientation, while the films deposited on Pt(1 1 1)/Ti/SiO2/Si(1 0 0) substrates with LNO and CeO2 buffer layers showed, respectively, highly (1 0 0) and (1 1 0) preferred orientation. At 1 MHz, the dielectric constants were 416, 465 and 245 for the BZT thin films grown on Pt(1 1 1)/Ti/SiO2/Si(1 0 0), LNO and CeO2-buffered Pt(1 1 1)/Ti/SiO2/Si(1 0 0) substrates, respectively. The difference in dielectric properties of these three kinds of BZT films may be attributed to the different grain sizes and various orientations. {\textcopyright} 2008 Elsevier B.V. All rights reserved.",

keywords = "A1. Characterization, A1. Crystal structure, A1. X-ray diffraction, B1. Oxides, B2. Ferroelectric materials",

author = "Gao, \{L. N.\} and Song, \{S. N.\} and Zhai, \{J. W.\} and X. Yao and Xu, \{Z. K.\}",

year = "2008",

month = mar,

day = "15",

doi = "10.1016/j.jcrysgro.2007.12.015",

language = "English",

volume = "310",

pages = "1245--1249",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

number = "6",

}

TY - JOUR

T1 - Effects of buffer layers on the orientation and dielectric properties of Ba(Zr0.20Ti0.80)O3 thin films prepared by sol-gel method

AU - Gao, L. N.

AU - Song, S. N.

AU - Zhai, J. W.

AU - Yao, X.

AU - Xu, Z. K.

PY - 2008/3/15

Y1 - 2008/3/15

N2 - Ba(Zr0.20Ti0.80)O3 (BZT) thin films were deposited on Pt(1 1 1)/Ti/SiO2/Si(1 0 0), LaNiO3 (LNO) and CeO2-buffered Pt(1 1 1)/Ti/SiO2/Si(1 0 0) substrates by sol-gel process. The BZT thin films directly grown on Pt(1 1 1)/Ti/SiO2/Si(1 0 0) substrates exhibited highly (1 1 1) preferred orientation, while the films deposited on Pt(1 1 1)/Ti/SiO2/Si(1 0 0) substrates with LNO and CeO2 buffer layers showed, respectively, highly (1 0 0) and (1 1 0) preferred orientation. At 1 MHz, the dielectric constants were 416, 465 and 245 for the BZT thin films grown on Pt(1 1 1)/Ti/SiO2/Si(1 0 0), LNO and CeO2-buffered Pt(1 1 1)/Ti/SiO2/Si(1 0 0) substrates, respectively. The difference in dielectric properties of these three kinds of BZT films may be attributed to the different grain sizes and various orientations. © 2008 Elsevier B.V. All rights reserved.

AB - Ba(Zr0.20Ti0.80)O3 (BZT) thin films were deposited on Pt(1 1 1)/Ti/SiO2/Si(1 0 0), LaNiO3 (LNO) and CeO2-buffered Pt(1 1 1)/Ti/SiO2/Si(1 0 0) substrates by sol-gel process. The BZT thin films directly grown on Pt(1 1 1)/Ti/SiO2/Si(1 0 0) substrates exhibited highly (1 1 1) preferred orientation, while the films deposited on Pt(1 1 1)/Ti/SiO2/Si(1 0 0) substrates with LNO and CeO2 buffer layers showed, respectively, highly (1 0 0) and (1 1 0) preferred orientation. At 1 MHz, the dielectric constants were 416, 465 and 245 for the BZT thin films grown on Pt(1 1 1)/Ti/SiO2/Si(1 0 0), LNO and CeO2-buffered Pt(1 1 1)/Ti/SiO2/Si(1 0 0) substrates, respectively. The difference in dielectric properties of these three kinds of BZT films may be attributed to the different grain sizes and various orientations. © 2008 Elsevier B.V. All rights reserved.

KW - A1. Characterization

KW - A1. Crystal structure

KW - A1. X-ray diffraction

KW - B1. Oxides

KW - B2. Ferroelectric materials

UR - https://www.scopus.com/pages/publications/39649095614

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-39649095614&origin=recordpage

U2 - 10.1016/j.jcrysgro.2007.12.015

DO - 10.1016/j.jcrysgro.2007.12.015

M3 - RGC 21 - Publication in refereed journal

SN - 0022-0248

VL - 310

SP - 1245

EP - 1249

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 6

ER -

Effects of buffer layers on the orientation and dielectric properties of Ba(Zr0.20Ti0.80)O3 thin films prepared by sol-gel method

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