Effects of annealing temperature on excitonic emissions from Na-implanted ZnO nanorods
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
Author(s)
Detail(s)
Original language | English |
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Pages (from-to) | 76-78 |
Journal / Publication | Materials Letters |
Volume | 90 |
Publication status | Published - Jan 2013 |
Link(s)
Abstract
The effects of annealing temperature on excitonic emissions from Na + ion implanted ZnO nanorods are studied and annealing between 600 and 800 °C can effectively repair the implantation as evidenced by the enhanced excitonic emissions. A well-resolved bound exciton line at 3.352 eV with a linewidth of ∼2 meV emerges from 800 °C annealed sample and could be related to the formation of NaZn acceptor. When the annealing temperature is increased, the intensity of the I6-8 line decreases while that of I3 increases, suggesting enhanced ionization of neutral donors at elevated temperature. © 2012 Elsevier B.V.
Research Area(s)
- Nanostructures, Photoluminescence, Semiconductors
Citation Format(s)
Effects of annealing temperature on excitonic emissions from Na-implanted ZnO nanorods. / Liu, Huibin; Lu, Qiuyuan; He, Haiping et al.
In: Materials Letters, Vol. 90, 01.2013, p. 76-78.
In: Materials Letters, Vol. 90, 01.2013, p. 76-78.
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review