Effects of annealing temperature on excitonic emissions from Na-implanted ZnO nanorods

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

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Author(s)

  • Huibin Liu
  • Qiuyuan Lu
  • Haiping He
  • Kewei Wu
  • Shuili Li
  • Jingyun Huang
  • Yangfan Lu
  • Xinhua Pan
  • Zhizhen Ye

Detail(s)

Original languageEnglish
Pages (from-to)76-78
Journal / PublicationMaterials Letters
Volume90
Publication statusPublished - Jan 2013

Abstract

The effects of annealing temperature on excitonic emissions from Na + ion implanted ZnO nanorods are studied and annealing between 600 and 800 °C can effectively repair the implantation as evidenced by the enhanced excitonic emissions. A well-resolved bound exciton line at 3.352 eV with a linewidth of ∼2 meV emerges from 800 °C annealed sample and could be related to the formation of NaZn acceptor. When the annealing temperature is increased, the intensity of the I6-8 line decreases while that of I3 increases, suggesting enhanced ionization of neutral donors at elevated temperature. © 2012 Elsevier B.V.

Research Area(s)

  • Nanostructures, Photoluminescence, Semiconductors

Citation Format(s)

Effects of annealing temperature on excitonic emissions from Na-implanted ZnO nanorods. / Liu, Huibin; Lu, Qiuyuan; He, Haiping et al.
In: Materials Letters, Vol. 90, 01.2013, p. 76-78.

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review