Effects of annealing temperature on excitonic emissions from Na-implanted ZnO nanorods

Huibin Liu; Qiuyuan Lu; Haiping He; Kewei Wu; Shuili Li; Jingyun Huang; Yangfan Lu; Xinhua Pan; Zhizhen Ye; Paul K. Chu

doi:10.1016/j.matlet.2012.09.020

Effects of annealing temperature on excitonic emissions from Na-implanted ZnO nanorods

Huibin Liu
, Qiuyuan Lu
, Haiping He
, Kewei Wu
, Shuili Li
, Jingyun Huang
, Yangfan Lu
, Xinhua Pan
, Zhizhen Ye
, Paul K. Chu

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

4 Citations (Scopus)

Abstract

The effects of annealing temperature on excitonic emissions from Na ⁺ ion implanted ZnO nanorods are studied and annealing between 600 and 800 °C can effectively repair the implantation as evidenced by the enhanced excitonic emissions. A well-resolved bound exciton line at 3.352 eV with a linewidth of ∼2 meV emerges from 800 °C annealed sample and could be related to the formation of Na_Zn acceptor. When the annealing temperature is increased, the intensity of the I_6-8 line decreases while that of I₃ increases, suggesting enhanced ionization of neutral donors at elevated temperature. © 2012 Elsevier B.V.

Original language	English
Pages (from-to)	76-78
Journal	Materials Letters
Volume	90
DOIs	https://doi.org/10.1016/j.matlet.2012.09.020
Publication status	Published - Jan 2013

Research Keywords

Nanostructures
Photoluminescence
Semiconductors

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10.1016/j.matlet.2012.09.020

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title = "Effects of annealing temperature on excitonic emissions from Na-implanted ZnO nanorods",

abstract = "The effects of annealing temperature on excitonic emissions from Na + ion implanted ZnO nanorods are studied and annealing between 600 and 800 °C can effectively repair the implantation as evidenced by the enhanced excitonic emissions. A well-resolved bound exciton line at 3.352 eV with a linewidth of ∼2 meV emerges from 800 °C annealed sample and could be related to the formation of NaZn acceptor. When the annealing temperature is increased, the intensity of the I6-8 line decreases while that of I3 increases, suggesting enhanced ionization of neutral donors at elevated temperature. {\textcopyright} 2012 Elsevier B.V.",

keywords = "Nanostructures, Photoluminescence, Semiconductors",

author = "Huibin Liu and Qiuyuan Lu and Haiping He and Kewei Wu and Shuili Li and Jingyun Huang and Yangfan Lu and Xinhua Pan and Zhizhen Ye and Chu, \{Paul K.\}",

year = "2013",

month = jan,

doi = "10.1016/j.matlet.2012.09.020",

language = "English",

volume = "90",

pages = "76--78",

journal = "Materials Letters",

issn = "0167-577X",

publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Effects of annealing temperature on excitonic emissions from Na-implanted ZnO nanorods

AU - Liu, Huibin

AU - Lu, Qiuyuan

AU - He, Haiping

AU - Wu, Kewei

AU - Li, Shuili

AU - Huang, Jingyun

AU - Lu, Yangfan

AU - Pan, Xinhua

AU - Ye, Zhizhen

AU - Chu, Paul K.

PY - 2013/1

Y1 - 2013/1

N2 - The effects of annealing temperature on excitonic emissions from Na + ion implanted ZnO nanorods are studied and annealing between 600 and 800 °C can effectively repair the implantation as evidenced by the enhanced excitonic emissions. A well-resolved bound exciton line at 3.352 eV with a linewidth of ∼2 meV emerges from 800 °C annealed sample and could be related to the formation of NaZn acceptor. When the annealing temperature is increased, the intensity of the I6-8 line decreases while that of I3 increases, suggesting enhanced ionization of neutral donors at elevated temperature. © 2012 Elsevier B.V.

AB - The effects of annealing temperature on excitonic emissions from Na + ion implanted ZnO nanorods are studied and annealing between 600 and 800 °C can effectively repair the implantation as evidenced by the enhanced excitonic emissions. A well-resolved bound exciton line at 3.352 eV with a linewidth of ∼2 meV emerges from 800 °C annealed sample and could be related to the formation of NaZn acceptor. When the annealing temperature is increased, the intensity of the I6-8 line decreases while that of I3 increases, suggesting enhanced ionization of neutral donors at elevated temperature. © 2012 Elsevier B.V.

KW - Nanostructures

KW - Photoluminescence

KW - Semiconductors

UR - https://www.scopus.com/pages/publications/84870713198

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-84870713198&origin=recordpage

U2 - 10.1016/j.matlet.2012.09.020

DO - 10.1016/j.matlet.2012.09.020

M3 - RGC 21 - Publication in refereed journal

SN - 0167-577X

VL - 90

SP - 76

EP - 78

JO - Materials Letters

JF - Materials Letters

ER -

Effects of annealing temperature on excitonic emissions from Na-implanted ZnO nanorods

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