Effects of amorphous layer regrowth on carbon activation in GaAs and InP

A. J. Moll; J. W. Ager III; K. M. Yu; W. Walukiewicz; E. E. Haller

Effects of amorphous layer regrowth on carbon activation in GaAs and InP

A. J. Moll, J. W. Ager III, K. M. Yu, W. Walukiewicz, E. E. Haller

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

Abstract

The effect of the Ga dose on the activation of implanted carbon in GaAs is determined. The free hole concentration is found to depend on the depth of the amorphous layer created by the Ga co-implant. Initial results on C implantation in InP indicate the behavior of C is very different in InP when compared to GaAs. The role of precipitation in reducing the activation of C in both GaAs and InP is discussed.

Original language	English
Title of host publication	Materials Research Society Symposium Proceedings
Publisher	Publ by Materials Research Society
Pages	325-330
Volume	316
ISBN (Print)	1558992154
Publication status	Published - 1994
Externally published	Yes
Event	1993 Materials Research Society (MRS) Fall Meeting - Boston, MA, United States Duration: 29 Nov 1993 → 3 Dec 1993 https://www.mrs.org/fall1993

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Name
Volume	316
ISSN (Electronic)	0272-9172

Conference

Conference	1993 Materials Research Society (MRS) Fall Meeting
Place	United States
City	Boston, MA
Period	29/11/93 → 3/12/93
Internet address	https://www.mrs.org/fall1993

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title = "Effects of amorphous layer regrowth on carbon activation in GaAs and InP",

abstract = "The effect of the Ga dose on the activation of implanted carbon in GaAs is determined. The free hole concentration is found to depend on the depth of the amorphous layer created by the Ga co-implant. Initial results on C implantation in InP indicate the behavior of C is very different in InP when compared to GaAs. The role of precipitation in reducing the activation of C in both GaAs and InP is discussed.",

author = "Moll, {A. J.} and {Ager III}, {J. W.} and Yu, {K. M.} and W. Walukiewicz and Haller, {E. E.}",

year = "1994",

language = "English",

isbn = "1558992154",

volume = "316",

publisher = "Publ by Materials Research Society",

pages = "325--330",

booktitle = "Materials Research Society Symposium Proceedings",

note = "1993 Materials Research Society (MRS) Fall Meeting ; Conference date: 29-11-1993 Through 03-12-1993",

url = "https://www.mrs.org/fall1993",

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Effects of amorphous layer regrowth on carbon activation in GaAs and InP. / Moll, A. J.; Ager III, J. W.; Yu, K. M. et al.
Materials Research Society Symposium Proceedings. Vol. 316 Publ by Materials Research Society, 1994. p. 325-330.

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

TY - GEN

T1 - Effects of amorphous layer regrowth on carbon activation in GaAs and InP

AU - Moll, A. J.

AU - Ager III, J. W.

AU - Yu, K. M.

AU - Walukiewicz, W.

AU - Haller, E. E.

PY - 1994

Y1 - 1994

N2 - The effect of the Ga dose on the activation of implanted carbon in GaAs is determined. The free hole concentration is found to depend on the depth of the amorphous layer created by the Ga co-implant. Initial results on C implantation in InP indicate the behavior of C is very different in InP when compared to GaAs. The role of precipitation in reducing the activation of C in both GaAs and InP is discussed.

AB - The effect of the Ga dose on the activation of implanted carbon in GaAs is determined. The free hole concentration is found to depend on the depth of the amorphous layer created by the Ga co-implant. Initial results on C implantation in InP indicate the behavior of C is very different in InP when compared to GaAs. The role of precipitation in reducing the activation of C in both GaAs and InP is discussed.

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UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0028262768&origin=recordpage

M3 - RGC 32 - Refereed conference paper (with host publication)

SN - 1558992154

VL - 316

SP - 325

EP - 330

BT - Materials Research Society Symposium Proceedings

PB - Publ by Materials Research Society

T2 - 1993 Materials Research Society (MRS) Fall Meeting

Y2 - 29 November 1993 through 3 December 1993

ER -

Effects of amorphous layer regrowth on carbon activation in GaAs and InP

Abstract

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