Effects of ambient temperature on the electrical characteristics of thin la2O3 film grown by E-beam evaporation

Banani Sen; Hei Wong; Joel Molina; C. K. Sarkar; H. Iwai; J. A. Ng

doi:10.1109/EDSSC.2005.1635233

Effects of ambient temperature on the electrical characteristics of thin la2O3 film grown by E-beam evaporation

Banani Sen
, Hei Wong
, Joel Molina
, C. K. Sarkar
, H. Iwai
, J. A. Ng

Department of Electrical Engineering

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

2 Citations (Scopus)

Abstract

In this work, the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of thin La₂O₃ film deposited by e-beam evaporation were measured at several different temperatures ranging from 200 to 400 K and after constant-voltage stressing. Stressing experiment indicates significant generation of traps at duration less than 30 min. Strong temperature dependences were found both for I-V and C-V characteristics. The strong field and temperature dependence I-V curves suggested that the current conduction in the La₂O₃ film is most likely governed by the phonon-assisted conduction. Temperature dependence high-frequency C-V curves indicate that there are a lot of shallow traps in the bulk of La ₂O₃ film and at the La₂O₃/Si interface. Most of the charges trapped at the interface states can be depopulated at 400 K. Those instabilities will cause serious reliability problems for MOS device operations and have to be minimized. © 2005 IEEE.

Original language	English
Title of host publication	2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
Pages	173-176
DOIs	https://doi.org/10.1109/EDSSC.2005.1635233
Publication status	Published - 2006
Event	2005 IEEE Conference on Electron Devices and Solid-State Circuits (EDSSC 2005) - New World Renaissance Hotel, Hong Kong, China Duration: 19 Dec 2005 → 21 Dec 2005 https://ieeexplore.ieee.org/xpl/conhome/10895/proceeding

Conference

Conference	2005 IEEE Conference on Electron Devices and Solid-State Circuits (EDSSC 2005)
Place	Hong Kong, China
Period	19/12/05 → 21/12/05
Internet address	https://ieeexplore.ieee.org/xpl/conhome/10895/proceeding

Research Keywords

High-κ dielectric
La2O3
Post deposition annealing
Rare earth oxide

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10.1109/EDSSC.2005.1635233

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@inproceedings{f965099f1e654fe385ac839d7504996f,

title = "Effects of ambient temperature on the electrical characteristics of thin la2O3 film grown by E-beam evaporation",

abstract = "In this work, the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of thin La2O3 film deposited by e-beam evaporation were measured at several different temperatures ranging from 200 to 400 K and after constant-voltage stressing. Stressing experiment indicates significant generation of traps at duration less than 30 min. Strong temperature dependences were found both for I-V and C-V characteristics. The strong field and temperature dependence I-V curves suggested that the current conduction in the La2O3 film is most likely governed by the phonon-assisted conduction. Temperature dependence high-frequency C-V curves indicate that there are a lot of shallow traps in the bulk of La 2O3 film and at the La2O3/Si interface. Most of the charges trapped at the interface states can be depopulated at 400 K. Those instabilities will cause serious reliability problems for MOS device operations and have to be minimized. {\textcopyright} 2005 IEEE.",

keywords = "High-κ dielectric, La2O3, Post deposition annealing, Rare earth oxide",

author = "Banani Sen and Hei Wong and Joel Molina and Sarkar, \{C. K.\} and H. Iwai and Ng, \{J. A.\}",

year = "2006",

doi = "10.1109/EDSSC.2005.1635233",

language = "English",

isbn = "0780393392",

pages = "173--176",

booktitle = "2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC",

note = "2005 IEEE Conference on Electron Devices and Solid-State Circuits (EDSSC 2005) ; Conference date: 19-12-2005 Through 21-12-2005",

url = "https://ieeexplore.ieee.org/xpl/conhome/10895/proceeding",

}

Sen, B, Wong, H, Molina, J, Sarkar, CK, Iwai, H & Ng, JA 2006, Effects of ambient temperature on the electrical characteristics of thin la2O3 film grown by E-beam evaporation. in 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC., 1635233, pp. 173-176, 2005 IEEE Conference on Electron Devices and Solid-State Circuits (EDSSC 2005), Hong Kong, China, 19/12/05. https://doi.org/10.1109/EDSSC.2005.1635233

Effects of ambient temperature on the electrical characteristics of thin la2O3 film grown by E-beam evaporation. / Sen, Banani; Wong, Hei; Molina, Joel et al.
2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC. 2006. p. 173-176 1635233.

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

TY - GEN

T1 - Effects of ambient temperature on the electrical characteristics of thin la2O3 film grown by E-beam evaporation

AU - Sen, Banani

AU - Wong, Hei

AU - Molina, Joel

AU - Sarkar, C. K.

AU - Iwai, H.

AU - Ng, J. A.

PY - 2006

Y1 - 2006

N2 - In this work, the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of thin La2O3 film deposited by e-beam evaporation were measured at several different temperatures ranging from 200 to 400 K and after constant-voltage stressing. Stressing experiment indicates significant generation of traps at duration less than 30 min. Strong temperature dependences were found both for I-V and C-V characteristics. The strong field and temperature dependence I-V curves suggested that the current conduction in the La2O3 film is most likely governed by the phonon-assisted conduction. Temperature dependence high-frequency C-V curves indicate that there are a lot of shallow traps in the bulk of La 2O3 film and at the La2O3/Si interface. Most of the charges trapped at the interface states can be depopulated at 400 K. Those instabilities will cause serious reliability problems for MOS device operations and have to be minimized. © 2005 IEEE.

AB - In this work, the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of thin La2O3 film deposited by e-beam evaporation were measured at several different temperatures ranging from 200 to 400 K and after constant-voltage stressing. Stressing experiment indicates significant generation of traps at duration less than 30 min. Strong temperature dependences were found both for I-V and C-V characteristics. The strong field and temperature dependence I-V curves suggested that the current conduction in the La2O3 film is most likely governed by the phonon-assisted conduction. Temperature dependence high-frequency C-V curves indicate that there are a lot of shallow traps in the bulk of La 2O3 film and at the La2O3/Si interface. Most of the charges trapped at the interface states can be depopulated at 400 K. Those instabilities will cause serious reliability problems for MOS device operations and have to be minimized. © 2005 IEEE.

KW - High-κ dielectric

KW - La2O3

KW - Post deposition annealing

KW - Rare earth oxide

UR - https://www.scopus.com/pages/publications/43549102162

UR - https://www.scopus.com/pages/publications/43549102162#tab=impact

U2 - 10.1109/EDSSC.2005.1635233

DO - 10.1109/EDSSC.2005.1635233

M3 - RGC 32 - Refereed conference paper (with host publication)

SN - 0780393392

SN - 9780780393394

SP - 173

EP - 176

BT - 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC

T2 - 2005 IEEE Conference on Electron Devices and Solid-State Circuits (EDSSC 2005)

Y2 - 19 December 2005 through 21 December 2005

ER -

Effects of ambient temperature on the electrical characteristics of thin la2O3 film grown by E-beam evaporation

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