Effects of ambient pressure on silicon nanowire growth

X. H. Fan; L. Xu; C. P. Li; Y. F. Zheng; C. S. Lee; S. T. Lee

doi:10.1016/S0009-2614(00)01366-X

Effects of ambient pressure on silicon nanowire growth

X. H. Fan, L. Xu, C. P. Li, Y. F. Zheng, C. S. Lee, S. T. Lee

Centre of Super-Diamond and Advanced Films

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

30 Citations (Scopus)

Abstract

Growth of silicon nanowires (SiNWs) by thermal evaporation of SiO in a closed system was studied. The yield of SiNWs obtained in the present closed system was much higher than that from the previous open systems. As the ambient pressure increased, the yield of SiNWs decreased and the diameter of the SiNWs increased, but the surface of the SiNWs was roughened. Transmission electron microscopic examination showed that the originally smooth surface of SiNWs was roughened by the formation of Si nano-particles. The implication of these results on the growth mechanism of the SiNWs is discussed. © 2001 Elsevier Science B.V.

Original language	English
Pages (from-to)	229-232
Journal	Chemical Physics Letters
Volume	334
Issue number	4-6
DOIs	https://doi.org/10.1016/S0009-2614(00)01366-X
Publication status	Published - 9 Feb 2001

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title = "Effects of ambient pressure on silicon nanowire growth",

abstract = "Growth of silicon nanowires (SiNWs) by thermal evaporation of SiO in a closed system was studied. The yield of SiNWs obtained in the present closed system was much higher than that from the previous open systems. As the ambient pressure increased, the yield of SiNWs decreased and the diameter of the SiNWs increased, but the surface of the SiNWs was roughened. Transmission electron microscopic examination showed that the originally smooth surface of SiNWs was roughened by the formation of Si nano-particles. The implication of these results on the growth mechanism of the SiNWs is discussed. {\textcopyright} 2001 Elsevier Science B.V.",

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T1 - Effects of ambient pressure on silicon nanowire growth

AU - Fan, X. H.

AU - Xu, L.

AU - Li, C. P.

AU - Zheng, Y. F.

AU - Lee, C. S.

AU - Lee, S. T.

PY - 2001/2/9

Y1 - 2001/2/9

N2 - Growth of silicon nanowires (SiNWs) by thermal evaporation of SiO in a closed system was studied. The yield of SiNWs obtained in the present closed system was much higher than that from the previous open systems. As the ambient pressure increased, the yield of SiNWs decreased and the diameter of the SiNWs increased, but the surface of the SiNWs was roughened. Transmission electron microscopic examination showed that the originally smooth surface of SiNWs was roughened by the formation of Si nano-particles. The implication of these results on the growth mechanism of the SiNWs is discussed. © 2001 Elsevier Science B.V.

AB - Growth of silicon nanowires (SiNWs) by thermal evaporation of SiO in a closed system was studied. The yield of SiNWs obtained in the present closed system was much higher than that from the previous open systems. As the ambient pressure increased, the yield of SiNWs decreased and the diameter of the SiNWs increased, but the surface of the SiNWs was roughened. Transmission electron microscopic examination showed that the originally smooth surface of SiNWs was roughened by the formation of Si nano-particles. The implication of these results on the growth mechanism of the SiNWs is discussed. © 2001 Elsevier Science B.V.

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U2 - 10.1016/S0009-2614(00)01366-X

DO - 10.1016/S0009-2614(00)01366-X

M3 - RGC 21 - Publication in refereed journal

SN - 0009-2614

VL - 334

SP - 229

EP - 232

JO - Chemical Physics Letters

JF - Chemical Physics Letters

IS - 4-6

ER -

Effects of ambient pressure on silicon nanowire growth

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