Effects of ambient pressure on silicon nanowire growth

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • X. H. Fan
  • L. Xu
  • C. P. Li
  • Y. F. Zheng
  • S. T. Lee

Detail(s)

Original languageEnglish
Pages (from-to)229-232
Journal / PublicationChemical Physics Letters
Volume334
Issue number4-6
Publication statusPublished - 9 Feb 2001

Abstract

Growth of silicon nanowires (SiNWs) by thermal evaporation of SiO in a closed system was studied. The yield of SiNWs obtained in the present closed system was much higher than that from the previous open systems. As the ambient pressure increased, the yield of SiNWs decreased and the diameter of the SiNWs increased, but the surface of the SiNWs was roughened. Transmission electron microscopic examination showed that the originally smooth surface of SiNWs was roughened by the formation of Si nano-particles. The implication of these results on the growth mechanism of the SiNWs is discussed. © 2001 Elsevier Science B.V.

Citation Format(s)

Effects of ambient pressure on silicon nanowire growth. / Fan, X. H.; Xu, L.; Li, C. P.; Zheng, Y. F.; Lee, C. S.; Lee, S. T.

In: Chemical Physics Letters, Vol. 334, No. 4-6, 09.02.2001, p. 229-232.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review