Effective control of polarity in Bi 0.9La 0.1FeO 3 thin films by dopant-related internal bias

Yang Wang; Weigang Chen; Zuhuang Chen; Naidu Chukka Rami; Junling Wang; John Wang; Lang Chen

doi:10.1002/pssa.201026628

Effective control of polarity in Bi _0.9La _0.1FeO ₃ thin films by dopant-related internal bias

Yang Wang, Weigang Chen, Zuhuang Chen, Naidu Chukka Rami, Junling Wang, John Wang, Lang Chen

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

Abstract

The as-grown polarizations of Mn- and Ti-doped Bi 0.9La 0.1FeO 3 thin films (BLFMn and BLFTi) are demonstrated to align in an upward direction due to the occurrence of an internal bias field E i that points up. On the basis of the conductivity and XPS as well as leakage current measurements, E i in BLFMn is attributed to an asymmetric distribution of charged defects, while the elevated Fermi level and broadened positively charged depletion zone are supposed to induce E i in BLFTi. The different physical origins of E i are intimately connected with the nature of aliovalent acceptor and donor dopants of Mn and Ti ions, which is further verified by the consistent voltage offsets in the piezoelectric hysteresis loops. This suggests an effective way to control the polarity of ferroelectric thin films through the tuning of chemical doping levels. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Original language	English
Pages (from-to)	919-923
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	208
Issue number	4
DOIs	https://doi.org/10.1002/pssa.201026628
Publication status	Published - Apr 2011
Externally published	Yes

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Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

Research Keywords

BiFeO 3
piezoresponse force microscopy
polarity

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@article{657f67a9ea5146779c30019eb9ab0864,

title = "Effective control of polarity in Bi 0.9La 0.1FeO 3 thin films by dopant-related internal bias",

abstract = "The as-grown polarizations of Mn- and Ti-doped Bi 0.9La 0.1FeO 3 thin films (BLFMn and BLFTi) are demonstrated to align in an upward direction due to the occurrence of an internal bias field E i that points up. On the basis of the conductivity and XPS as well as leakage current measurements, E i in BLFMn is attributed to an asymmetric distribution of charged defects, while the elevated Fermi level and broadened positively charged depletion zone are supposed to induce E i in BLFTi. The different physical origins of E i are intimately connected with the nature of aliovalent acceptor and donor dopants of Mn and Ti ions, which is further verified by the consistent voltage offsets in the piezoelectric hysteresis loops. This suggests an effective way to control the polarity of ferroelectric thin films through the tuning of chemical doping levels. {\textcopyright} 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.",

keywords = "BiFeO 3, piezoresponse force microscopy, polarity",

author = "Yang Wang and Weigang Chen and Zuhuang Chen and Rami, {Naidu Chukka} and Junling Wang and John Wang and Lang Chen",

note = "Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].",

year = "2011",

month = apr,

doi = "10.1002/pssa.201026628",

language = "English",

volume = "208",

pages = "919--923",

journal = "Physica Status Solidi (A) Applications and Materials Science",

issn = "1862-6300",

publisher = "Wiley-VCH Verlag GmbH",

number = "4",

}

TY - JOUR

T1 - Effective control of polarity in Bi 0.9La 0.1FeO 3 thin films by dopant-related internal bias

AU - Wang, Yang

AU - Chen, Weigang

AU - Chen, Zuhuang

AU - Rami, Naidu Chukka

AU - Wang, Junling

AU - Wang, John

AU - Chen, Lang

N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

PY - 2011/4

Y1 - 2011/4

N2 - The as-grown polarizations of Mn- and Ti-doped Bi 0.9La 0.1FeO 3 thin films (BLFMn and BLFTi) are demonstrated to align in an upward direction due to the occurrence of an internal bias field E i that points up. On the basis of the conductivity and XPS as well as leakage current measurements, E i in BLFMn is attributed to an asymmetric distribution of charged defects, while the elevated Fermi level and broadened positively charged depletion zone are supposed to induce E i in BLFTi. The different physical origins of E i are intimately connected with the nature of aliovalent acceptor and donor dopants of Mn and Ti ions, which is further verified by the consistent voltage offsets in the piezoelectric hysteresis loops. This suggests an effective way to control the polarity of ferroelectric thin films through the tuning of chemical doping levels. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

AB - The as-grown polarizations of Mn- and Ti-doped Bi 0.9La 0.1FeO 3 thin films (BLFMn and BLFTi) are demonstrated to align in an upward direction due to the occurrence of an internal bias field E i that points up. On the basis of the conductivity and XPS as well as leakage current measurements, E i in BLFMn is attributed to an asymmetric distribution of charged defects, while the elevated Fermi level and broadened positively charged depletion zone are supposed to induce E i in BLFTi. The different physical origins of E i are intimately connected with the nature of aliovalent acceptor and donor dopants of Mn and Ti ions, which is further verified by the consistent voltage offsets in the piezoelectric hysteresis loops. This suggests an effective way to control the polarity of ferroelectric thin films through the tuning of chemical doping levels. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

KW - BiFeO 3

KW - piezoresponse force microscopy

KW - polarity

UR - http://www.scopus.com/inward/record.url?scp=79954430675&partnerID=8YFLogxK

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-79954430675&origin=recordpage

U2 - 10.1002/pssa.201026628

DO - 10.1002/pssa.201026628

M3 - RGC 21 - Publication in refereed journal

SN - 1862-6300

VL - 208

SP - 919

EP - 923

JO - Physica Status Solidi (A) Applications and Materials Science

JF - Physica Status Solidi (A) Applications and Materials Science

IS - 4

ER -