TY - GEN
T1 - Effect of Void in the Anisotropic Conductive Assembly
AU - Yeung, NH
AU - Chan, YC
AU - TAN, Sai Choo
AU - Lee, KK
AU - Chan, KK
PY - 2003/5
Y1 - 2003/5
N2 - The design of the ACF is used for very fine pitch application in the microelectronic industry such as flip chip technology. During the bonding process, bumps on the chip and pads on the substrate has been first aligned and then heat and pressure have been applied so as to apply thermal energy to the ACF for curing and to make a plastic and permanent deformation of the conductive particles. Consequently, a permanent mechanical contact can be formed between the bumps and the pads allowing the flow of electric field. In this study, the FC assembly using ACF was assumed to be a visco-elastic material subjected to various void sizes, which were entrapped inside the ACF. A finite element method is used to analyze the stresses in the FC assembly. The result found that the smaller the void size, the larger the stress concentration. Also, the von mises stress is larger at the upper position than the lower position. It implies that the four corners of a void is seen to be a preferable site for crack initiation, propagation and possibly failure to occur. Moreover, temperature profile of the reflow and the location of the void would also affect the stress level of the ACF.
AB - The design of the ACF is used for very fine pitch application in the microelectronic industry such as flip chip technology. During the bonding process, bumps on the chip and pads on the substrate has been first aligned and then heat and pressure have been applied so as to apply thermal energy to the ACF for curing and to make a plastic and permanent deformation of the conductive particles. Consequently, a permanent mechanical contact can be formed between the bumps and the pads allowing the flow of electric field. In this study, the FC assembly using ACF was assumed to be a visco-elastic material subjected to various void sizes, which were entrapped inside the ACF. A finite element method is used to analyze the stresses in the FC assembly. The result found that the smaller the void size, the larger the stress concentration. Also, the von mises stress is larger at the upper position than the lower position. It implies that the four corners of a void is seen to be a preferable site for crack initiation, propagation and possibly failure to occur. Moreover, temperature profile of the reflow and the location of the void would also affect the stress level of the ACF.
KW - ACF
KW - Void
KW - Von Mises stress
KW - Finite Element Method
KW - Reflow
UR - http://www.scopus.com/inward/record.url?scp=0038350399&partnerID=8YFLogxK
UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0038350399&origin=recordpage
U2 - 10.1109/ECTC.2003.1216474
DO - 10.1109/ECTC.2003.1216474
M3 - RGC 32 - Refereed conference paper (with host publication)
SN - 0780377915
SN - 0780374304
T3 - Proceedings - Electronic Components and Technology Conference
SP - 1378
EP - 1382
BT - 2003 Proceedings 53rd Electronic Components & Technology Conference
PB - IEEE
T2 - 53rd Electronic Components and Technology Conference, 2003
Y2 - 27 May 2003 through 30 May 2003
ER -