Effect of ultraviolet illumination on metal oxide resistive memory

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

16 Scopus Citations
View graph of relations

Author(s)

  • José Ramón Durán Retamal
  • Chen-Fang Kang
  • Chih-Hsiang Ho
  • Jr-Jian Ke
  • Wen-Yuan Chang

Detail(s)

Original languageEnglish
Article number253111
Journal / PublicationApplied Physics Letters
Volume105
Issue number25
Publication statusPublished - 22 Dec 2014
Externally publishedYes

Abstract

We investigate the photoelectrical and resistive switching properties of Pt/ZnO/Pt capacitor operated in unipolar mode under ultraviolet (UV) illumination. The oxygen photodesorption under UV illumination explains the photoconduction observed in initial and high resistance states. Meanwhile, oxygen readsorption at surface-related defects justifies the different photoresponses dynamics in both states. Finally, UV illumination significantly reduces the variations of resistance in high resistance state, set voltage and reset voltage by 58%, 33%, and 25%, respectively, stabilizing Pt/ZnO/Pt capacitor. Our findings in improved switching uniformity via UV light give physical insight into designing resistive memory devices.

Citation Format(s)

Effect of ultraviolet illumination on metal oxide resistive memory. / Retamal, José Ramón Durán; Kang, Chen-Fang; Ho, Chih-Hsiang; Ke, Jr-Jian; Chang, Wen-Yuan; He, Jr-Hau.

In: Applied Physics Letters, Vol. 105, No. 25, 253111, 22.12.2014.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review