Effect of ultraviolet illumination on metal oxide resistive memory
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
Author(s)
Detail(s)
Original language | English |
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Article number | 253111 |
Journal / Publication | Applied Physics Letters |
Volume | 105 |
Issue number | 25 |
Publication status | Published - 22 Dec 2014 |
Externally published | Yes |
Link(s)
Abstract
We investigate the photoelectrical and resistive switching properties of Pt/ZnO/Pt capacitor operated in unipolar mode under ultraviolet (UV) illumination. The oxygen photodesorption under UV illumination explains the photoconduction observed in initial and high resistance states. Meanwhile, oxygen readsorption at surface-related defects justifies the different photoresponses dynamics in both states. Finally, UV illumination significantly reduces the variations of resistance in high resistance state, set voltage and reset voltage by 58%, 33%, and 25%, respectively, stabilizing Pt/ZnO/Pt capacitor. Our findings in improved switching uniformity via UV light give physical insight into designing resistive memory devices.
Citation Format(s)
Effect of ultraviolet illumination on metal oxide resistive memory. / Retamal, José Ramón Durán; Kang, Chen-Fang; Ho, Chih-Hsiang et al.
In: Applied Physics Letters, Vol. 105, No. 25, 253111, 22.12.2014.
In: Applied Physics Letters, Vol. 105, No. 25, 253111, 22.12.2014.
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review