Effect of ultraviolet illumination on metal oxide resistive memory

José Ramón Durán Retamal; Chen-Fang Kang; Chih-Hsiang Ho; Jr-Jian Ke; Wen-Yuan Chang; Jr-Hau He

doi:10.1063/1.4904396

Effect of ultraviolet illumination on metal oxide resistive memory

José Ramón Durán Retamal
, Chen-Fang Kang
, Chih-Hsiang Ho
, Jr-Jian Ke
, Wen-Yuan Chang
, Jr-Hau He^*

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

18 Citations (Scopus)

Abstract

We investigate the photoelectrical and resistive switching properties of Pt/ZnO/Pt capacitor operated in unipolar mode under ultraviolet (UV) illumination. The oxygen photodesorption under UV illumination explains the photoconduction observed in initial and high resistance states. Meanwhile, oxygen readsorption at surface-related defects justifies the different photoresponses dynamics in both states. Finally, UV illumination significantly reduces the variations of resistance in high resistance state, set voltage and reset voltage by 58%, 33%, and 25%, respectively, stabilizing Pt/ZnO/Pt capacitor. Our findings in improved switching uniformity via UV light give physical insight into designing resistive memory devices.

Original language	English
Article number	253111
Journal	Applied Physics Letters
Volume	105
Issue number	25
DOIs	https://doi.org/10.1063/1.4904396
Publication status	Published - 22 Dec 2014
Externally published	Yes

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@article{b342db89efb0464ba5a04bb35cd9c0dc,

title = "Effect of ultraviolet illumination on metal oxide resistive memory",

abstract = "We investigate the photoelectrical and resistive switching properties of Pt/ZnO/Pt capacitor operated in unipolar mode under ultraviolet (UV) illumination. The oxygen photodesorption under UV illumination explains the photoconduction observed in initial and high resistance states. Meanwhile, oxygen readsorption at surface-related defects justifies the different photoresponses dynamics in both states. Finally, UV illumination significantly reduces the variations of resistance in high resistance state, set voltage and reset voltage by 58\%, 33\%, and 25\%, respectively, stabilizing Pt/ZnO/Pt capacitor. Our findings in improved switching uniformity via UV light give physical insight into designing resistive memory devices.",

author = "Retamal, \{Jos{\'e} Ram{\'o}n Dur{\'a}n\} and Chen-Fang Kang and Chih-Hsiang Ho and Jr-Jian Ke and Wen-Yuan Chang and Jr-Hau He",

year = "2014",

month = dec,

day = "22",

doi = "10.1063/1.4904396",

language = "English",

volume = "105",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "25",

}

TY - JOUR

T1 - Effect of ultraviolet illumination on metal oxide resistive memory

AU - Retamal, José Ramón Durán

AU - Kang, Chen-Fang

AU - Ho, Chih-Hsiang

AU - Ke, Jr-Jian

AU - Chang, Wen-Yuan

AU - He, Jr-Hau

PY - 2014/12/22

Y1 - 2014/12/22

N2 - We investigate the photoelectrical and resistive switching properties of Pt/ZnO/Pt capacitor operated in unipolar mode under ultraviolet (UV) illumination. The oxygen photodesorption under UV illumination explains the photoconduction observed in initial and high resistance states. Meanwhile, oxygen readsorption at surface-related defects justifies the different photoresponses dynamics in both states. Finally, UV illumination significantly reduces the variations of resistance in high resistance state, set voltage and reset voltage by 58%, 33%, and 25%, respectively, stabilizing Pt/ZnO/Pt capacitor. Our findings in improved switching uniformity via UV light give physical insight into designing resistive memory devices.

AB - We investigate the photoelectrical and resistive switching properties of Pt/ZnO/Pt capacitor operated in unipolar mode under ultraviolet (UV) illumination. The oxygen photodesorption under UV illumination explains the photoconduction observed in initial and high resistance states. Meanwhile, oxygen readsorption at surface-related defects justifies the different photoresponses dynamics in both states. Finally, UV illumination significantly reduces the variations of resistance in high resistance state, set voltage and reset voltage by 58%, 33%, and 25%, respectively, stabilizing Pt/ZnO/Pt capacitor. Our findings in improved switching uniformity via UV light give physical insight into designing resistive memory devices.

UR - https://www.scopus.com/pages/publications/84920186400

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-84920186400&origin=recordpage

U2 - 10.1063/1.4904396

DO - 10.1063/1.4904396

M3 - RGC 21 - Publication in refereed journal

SN - 0003-6951

VL - 105

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 25

M1 - 253111

ER -

Effect of ultraviolet illumination on metal oxide resistive memory

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