TY - JOUR
T1 - Effect of three-dimensional current and temperature distributions on void formation and propagation in flip-chip solder joints during electromigration
AU - Liang, S. W.
AU - Chang, Y. W.
AU - Shao, T. L.
AU - Chen, Chih
AU - Tu, K. N.
N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].
PY - 2006
Y1 - 2006
N2 - Effect of three-dimensional current distribution on void formation in flip-chip solder joints during electromigration was investigated using thermoelectrical coupled modeling, in which the current and temperature redistributions were coupled and simulated at different stages of void growth. Simulation results show that a thin underbump metallization of low resistance in the periphery of the solder joint can serve as a conducting path, leading to void propagation in the periphery of the low current density region. In addition, the temperature of the solder did not rise significantly until 95% of the contact opening was eclipsed by the propagating void. © 2006 American Institute of Physics.
AB - Effect of three-dimensional current distribution on void formation in flip-chip solder joints during electromigration was investigated using thermoelectrical coupled modeling, in which the current and temperature redistributions were coupled and simulated at different stages of void growth. Simulation results show that a thin underbump metallization of low resistance in the periphery of the solder joint can serve as a conducting path, leading to void propagation in the periphery of the low current density region. In addition, the temperature of the solder did not rise significantly until 95% of the contact opening was eclipsed by the propagating void. © 2006 American Institute of Physics.
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U2 - 10.1063/1.2220550
DO - 10.1063/1.2220550
M3 - RGC 21 - Publication in refereed journal
SN - 0003-6951
VL - 89
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 2
M1 - 022117
ER -