Effect of the location of Mn sites in ferromagnetic Ga1-xMnxAs on its Curie temperature

K. M. Yu; W. Walukiewicz; T. Wojtowicz; I. Kuryliszyn; X. Liu; Y. Sasaki; J. K. Furdyna

Effect of the location of Mn sites in ferromagnetic Ga1-xMnxAs on its Curie temperature

K. M. Yu, W. Walukiewicz, T. Wojtowicz, I. Kuryliszyn, X. Liu, Y. Sasaki, J. K. Furdyna

Research output: Journal Publications and Reviews › RGC 22 - Publication in policy or professional journal

Abstract

We report a strong correlation between the location of Mn sites in ferromagnetic Ga_1-xMn_xAs measured by combined channeling Rutherford backscattering and by particle-induced x-ray emission experiments and its Curie temperature. The concentrations of free holes determined by electrochemical capacitance-voltage profiling and of uncompensated Mn²⁺ spins determined from superconducting quantum-interference device magnetization measurements are found to depend on the concentration of unstable defects involving highly mobile Mn interstitials. This leads to large variations in T_C of Ga_1-xMn_xAs when it is annealed at different temperatures in a narrow temperature range. The fact that annealing under various conditions has failed to produce Curie temperatures above ∼110 K is attributed to the existence of an upper limit on the free hole concentration in low-temperature-grown Ga_1-xMn_xAs.

Original language	English
Article number	201303
Pages (from-to)	2013031-2013034
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	65
Issue number	20
Publication status	Published - 15 May 2002
Externally published	Yes

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title = "Effect of the location of Mn sites in ferromagnetic Ga1-xMnxAs on its Curie temperature",

abstract = "We report a strong correlation between the location of Mn sites in ferromagnetic Ga1-xMnxAs measured by combined channeling Rutherford backscattering and by particle-induced x-ray emission experiments and its Curie temperature. The concentrations of free holes determined by electrochemical capacitance-voltage profiling and of uncompensated Mn2+ spins determined from superconducting quantum-interference device magnetization measurements are found to depend on the concentration of unstable defects involving highly mobile Mn interstitials. This leads to large variations in TC of Ga1-xMnxAs when it is annealed at different temperatures in a narrow temperature range. The fact that annealing under various conditions has failed to produce Curie temperatures above ∼110 K is attributed to the existence of an upper limit on the free hole concentration in low-temperature-grown Ga1-xMnxAs.",

author = "Yu, {K. M.} and W. Walukiewicz and T. Wojtowicz and I. Kuryliszyn and X. Liu and Y. Sasaki and Furdyna, {J. K.}",

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language = "English",

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pages = "2013031--2013034",

journal = "Physical Review B - Condensed Matter and Materials Physics",

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TY - JOUR

T1 - Effect of the location of Mn sites in ferromagnetic Ga1-xMnxAs on its Curie temperature

AU - Yu, K. M.

AU - Walukiewicz, W.

AU - Wojtowicz, T.

AU - Kuryliszyn, I.

AU - Liu, X.

AU - Sasaki, Y.

AU - Furdyna, J. K.

PY - 2002/5/15

Y1 - 2002/5/15

N2 - We report a strong correlation between the location of Mn sites in ferromagnetic Ga1-xMnxAs measured by combined channeling Rutherford backscattering and by particle-induced x-ray emission experiments and its Curie temperature. The concentrations of free holes determined by electrochemical capacitance-voltage profiling and of uncompensated Mn2+ spins determined from superconducting quantum-interference device magnetization measurements are found to depend on the concentration of unstable defects involving highly mobile Mn interstitials. This leads to large variations in TC of Ga1-xMnxAs when it is annealed at different temperatures in a narrow temperature range. The fact that annealing under various conditions has failed to produce Curie temperatures above ∼110 K is attributed to the existence of an upper limit on the free hole concentration in low-temperature-grown Ga1-xMnxAs.

AB - We report a strong correlation between the location of Mn sites in ferromagnetic Ga1-xMnxAs measured by combined channeling Rutherford backscattering and by particle-induced x-ray emission experiments and its Curie temperature. The concentrations of free holes determined by electrochemical capacitance-voltage profiling and of uncompensated Mn2+ spins determined from superconducting quantum-interference device magnetization measurements are found to depend on the concentration of unstable defects involving highly mobile Mn interstitials. This leads to large variations in TC of Ga1-xMnxAs when it is annealed at different temperatures in a narrow temperature range. The fact that annealing under various conditions has failed to produce Curie temperatures above ∼110 K is attributed to the existence of an upper limit on the free hole concentration in low-temperature-grown Ga1-xMnxAs.

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UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0037095459&origin=recordpage

M3 - RGC 22 - Publication in policy or professional journal

SN - 0163-1829

VL - 65

SP - 2013031

EP - 2013034

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 20

M1 - 201303

ER -

Effect of the location of Mn sites in ferromagnetic Ga1-xMnxAs on its Curie temperature

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