Effect of tensile strain on AlGaAs/GaAsP interdiffused quantum well laser

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Original languageEnglish
Pages (from-to)413-418
Journal / PublicationMaterials Research Society Symposium - Proceedings
Publication statusPublished - 1997


TitleProceedings of the 1997 MRS Fall Symposium
CityBoston, MA, USA
Period1 - 4 December 1997


In this paper, we study the interdiffusion of tensile strained GaAsyP1-y/Al0.33Ga0.67As single QW structures with a well width of 60 angstrom. Different P concentrations in the as-grown well are chosen to obtain different tensile strains in the QW. Interdiffusion induces changes in the tensile strains and confinement potentials, which consequently change the valence band structure and the optical gain.