Effect of tensile strain on AlGaAs/GaAsP interdiffused quantum well laser
Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 22_Publication in policy or professional journal
Author(s)
Related Research Unit(s)
Detail(s)
| Original language | English |
|---|---|
| Pages (from-to) | 413-418 |
| Journal / Publication | Materials Research Society Symposium - Proceedings |
| Volume | 484 |
| Publication status | Published - 1997 |
Conference
| Title | Proceedings of the 1997 MRS Fall Symposium |
|---|---|
| City | Boston, MA, USA |
| Period | 1 - 4 December 1997 |
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Abstract
In this paper, we study the interdiffusion of tensile strained GaAsyP1-y/Al0.33Ga0.67As single QW structures with a well width of 60 angstrom. Different P concentrations in the as-grown well are chosen to obtain different tensile strains in the QW. Interdiffusion induces changes in the tensile strains and confinement potentials, which consequently change the valence band structure and the optical gain.
Citation Format(s)
Effect of tensile strain on AlGaAs/GaAsP interdiffused quantum well laser. / Chan, K. S.; Chan, Michael C Y.
In: Materials Research Society Symposium - Proceedings, Vol. 484, 1997, p. 413-418.
In: Materials Research Society Symposium - Proceedings, Vol. 484, 1997, p. 413-418.
Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 22_Publication in policy or professional journal
