Effect of substrate temperature on the microstructure of thin-film silicide

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Detail(s)

Original languageEnglish
Pages (from-to)634-636
Journal / PublicationApplied Physics Letters
Volume31
Issue number9
Publication statusPublished - 1977
Externally publishedYes

Abstract

The effect of substrate temperature Ts during evaporation on the microstructure of Pd2Si thin films on (111) Si formed by evaporation followed by subsequent higher-temperature anneal has been investigated by transmission electron microscopy. For Ts of 20 and 100°C, the Pd2Si grows epitaxially on the substrate. For a Ts of 200°C the Pd2Si is polycrystalline and grains are uniaxially textured about the [001] axis and there are pinholes in the film. For a T s of 300°C, the microstructure of Pd2Si is spongy and grains are much less oriented.

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