Effect of substrate temperature on the microstructure of thin-film silicide
Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
Author(s)
Detail(s)
| Original language | English |
|---|---|
| Pages (from-to) | 634-636 |
| Journal / Publication | Applied Physics Letters |
| Volume | 31 |
| Issue number | 9 |
| Publication status | Published - 1977 |
| Externally published | Yes |
Link(s)
Abstract
The effect of substrate temperature Ts during evaporation on the microstructure of Pd2Si thin films on (111) Si formed by evaporation followed by subsequent higher-temperature anneal has been investigated by transmission electron microscopy. For Ts of 20 and 100°C, the Pd2Si grows epitaxially on the substrate. For a Ts of 200°C the Pd2Si is polycrystalline and grains are uniaxially textured about the [001] axis and there are pinholes in the film. For a T s of 300°C, the microstructure of Pd2Si is spongy and grains are much less oriented.
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Citation Format(s)
Effect of substrate temperature on the microstructure of thin-film silicide. / Köster, U.; Tu, K. N.; Ho, P. S.
In: Applied Physics Letters, Vol. 31, No. 9, 1977, p. 634-636.Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
