Effect of substrate temperature on the formation of shallow silicide contacts on Si using Pd-W and Pt-W alloys

M. Eizenberg; G. Ottaviani; K. N. Tu

doi:10.1063/1.91713

Author(s)

M. Eizenberg
G. Ottaviani
K. N. Tu

Detail(s)

Original language	English
Pages (from-to)	87-89
Journal / Publication	Applied Physics Letters
Volume	37
Issue number	1
Publication status	Published - 1980
Externally published	Yes

Link(s)

DOI	DOI https://doi.org/10.1063/1.91713 Final Published version
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Link to Scopus	https://www.scopus.com/record/display.uri?eid=2-s2.0-0346510651&origin=recordpage
Permanent Link	https://scholars.cityu.edu.hk/en/publications/publication(6760ddfa-13c9-4561-8395-1a8a388c78f6).html

Abstract

We have investigated the effect of substrate temperature on the reaction between Si and Pd-W and Pt-W alloys by I-V measurement of Schottky barrier height. We found that by maintaining a substrate temperature of 100°C during the deposition of W-rich Pd₂₀W₈₀ alloys, Schottky contacts of Pd₂Si on Si can be obtained without any subsequent annealing. Similarly, a substrate temperature of 300°C enables the formation of PtSi during the depostion of W-rich Pt₂₀W₈₀ alloys. For Pd-rich Pd₈₀W₂₀ and Pt-rich Pt₈₀W ₂₀ alloys, the substrate-temperature effect is not as significant as for the W-rich alloys.

Bibliographic Note

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Citation Format(s)

[ RIS ] [ BibTeX ]

Effect of substrate temperature on the formation of shallow silicide contacts on Si using Pd-W and Pt-W alloys. / Eizenberg, M.; Ottaviani, G.; Tu, K. N.
In: Applied Physics Letters, Vol. 37, No. 1, 1980, p. 87-89.

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

Eizenberg, M, Ottaviani, G & Tu, KN 1980, 'Effect of substrate temperature on the formation of shallow silicide contacts on Si using Pd-W and Pt-W alloys', Applied Physics Letters, vol. 37, no. 1, pp. 87-89. https://doi.org/10.1063/1.91713

Eizenberg, M., Ottaviani, G., & Tu, K. N. (1980). Effect of substrate temperature on the formation of shallow silicide contacts on Si using Pd-W and Pt-W alloys. Applied Physics Letters, 37(1), 87-89. https://doi.org/10.1063/1.91713

Eizenberg M, Ottaviani G, Tu KN. Effect of substrate temperature on the formation of shallow silicide contacts on Si using Pd-W and Pt-W alloys. Applied Physics Letters. 1980;37(1):87-89. doi: 10.1063/1.91713

Eizenberg, M. ; Ottaviani, G. ; Tu, K. N. / Effect of substrate temperature on the formation of shallow silicide contacts on Si using Pd-W and Pt-W alloys. In: Applied Physics Letters. 1980 ; Vol. 37, No. 1. pp. 87-89.