Effect of substrate temperature on the formation of shallow silicide contacts on Si using Pd-W and Pt-W alloys

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Detail(s)

Original languageEnglish
Pages (from-to)87-89
Journal / PublicationApplied Physics Letters
Volume37
Issue number1
Publication statusPublished - 1980
Externally publishedYes

Abstract

We have investigated the effect of substrate temperature on the reaction between Si and Pd-W and Pt-W alloys by I-V measurement of Schottky barrier height. We found that by maintaining a substrate temperature of 100°C during the deposition of W-rich Pd20W80 alloys, Schottky contacts of Pd2Si on Si can be obtained without any subsequent annealing. Similarly, a substrate temperature of 300°C enables the formation of PtSi during the depostion of W-rich Pt20W80 alloys. For Pd-rich Pd80W20 and Pt-rich Pt80W 20 alloys, the substrate-temperature effect is not as significant as for the W-rich alloys.

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