Effect of substrate temperature on the formation of shallow silicide contacts on Si using Pd-W and Pt-W alloys

M. Eizenberg; G. Ottaviani; K. N. Tu

doi:10.1063/1.91713

Effect of substrate temperature on the formation of shallow silicide contacts on Si using Pd-W and Pt-W alloys

M. Eizenberg, G. Ottaviani, K. N. Tu

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

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Abstract

We have investigated the effect of substrate temperature on the reaction between Si and Pd-W and Pt-W alloys by I-V measurement of Schottky barrier height. We found that by maintaining a substrate temperature of 100°C during the deposition of W-rich Pd₂₀W₈₀ alloys, Schottky contacts of Pd₂Si on Si can be obtained without any subsequent annealing. Similarly, a substrate temperature of 300°C enables the formation of PtSi during the depostion of W-rich Pt₂₀W₈₀ alloys. For Pd-rich Pd₈₀W₂₀ and Pt-rich Pt₈₀W ₂₀ alloys, the substrate-temperature effect is not as significant as for the W-rich alloys.

Original language	English
Pages (from-to)	87-89
Journal	Applied Physics Letters
Volume	37
Issue number	1
DOIs	https://doi.org/10.1063/1.91713
Publication status	Published - 1980
Externally published	Yes

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Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

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title = "Effect of substrate temperature on the formation of shallow silicide contacts on Si using Pd-W and Pt-W alloys",

abstract = "We have investigated the effect of substrate temperature on the reaction between Si and Pd-W and Pt-W alloys by I-V measurement of Schottky barrier height. We found that by maintaining a substrate temperature of 100°C during the deposition of W-rich Pd20W80 alloys, Schottky contacts of Pd2Si on Si can be obtained without any subsequent annealing. Similarly, a substrate temperature of 300°C enables the formation of PtSi during the depostion of W-rich Pt20W80 alloys. For Pd-rich Pd80W20 and Pt-rich Pt80W 20 alloys, the substrate-temperature effect is not as significant as for the W-rich alloys.",

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T1 - Effect of substrate temperature on the formation of shallow silicide contacts on Si using Pd-W and Pt-W alloys

AU - Eizenberg, M.

AU - Ottaviani, G.

AU - Tu, K. N.

N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

PY - 1980

Y1 - 1980

N2 - We have investigated the effect of substrate temperature on the reaction between Si and Pd-W and Pt-W alloys by I-V measurement of Schottky barrier height. We found that by maintaining a substrate temperature of 100°C during the deposition of W-rich Pd20W80 alloys, Schottky contacts of Pd2Si on Si can be obtained without any subsequent annealing. Similarly, a substrate temperature of 300°C enables the formation of PtSi during the depostion of W-rich Pt20W80 alloys. For Pd-rich Pd80W20 and Pt-rich Pt80W 20 alloys, the substrate-temperature effect is not as significant as for the W-rich alloys.

AB - We have investigated the effect of substrate temperature on the reaction between Si and Pd-W and Pt-W alloys by I-V measurement of Schottky barrier height. We found that by maintaining a substrate temperature of 100°C during the deposition of W-rich Pd20W80 alloys, Schottky contacts of Pd2Si on Si can be obtained without any subsequent annealing. Similarly, a substrate temperature of 300°C enables the formation of PtSi during the depostion of W-rich Pt20W80 alloys. For Pd-rich Pd80W20 and Pt-rich Pt80W 20 alloys, the substrate-temperature effect is not as significant as for the W-rich alloys.

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DO - 10.1063/1.91713

M3 - RGC 21 - Publication in refereed journal

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EP - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 1

ER -

Effect of substrate temperature on the formation of shallow silicide contacts on Si using Pd-W and Pt-W alloys

Abstract

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