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Effect of silicon addition on surface morphology and structural properties of titanium nitride films grown by reactive unbalanced direct current-magnetron sputtering

Y. G. Shen, Z. J. Liu, N. Jiang, H. S. Zhang, K. H. Chan, Z. K. Xu

    Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

    Abstract

    The effect of the amount of Si added to TiN on bonding structure, roughening kinetics and structural properties of the Ti1-x-ySi xNy films was investigated. The nanocomposite films were grown by reactive unbalanced direct current-magnetron sputtering. The energy dispersive x-ray (EDX) analysis, X-ray photoelectron spectroscopy (XPS), x-ray diffraction (XRD) and transmission electron microscopy (TEM) were used to study the chemical bonding, microstructure and roughening kinetics of the films. It was observed that an increase in the Si concentration resulted in a decrease in the crystalline TiN grains.
    Original languageEnglish
    Pages (from-to)523-534
    JournalJournal of Materials Research
    Volume19
    Issue number2
    DOIs
    Publication statusPublished - Feb 2004

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