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Effect of Sidewall Morphology on the Fracture and Fatigue Properties of Polysilicon Structural Films

Research output: Chapters, Conference Papers, Creative and Literary WorksRGC 32 - Refereed conference paper (with host publication)peer-review

Abstract

This study highlights the difference in the sidewall morphology of n+-type polysilicon films from two popular microelectromechanical systems (MEMS) processes and its effect on fracture and fatigue properties. Atomic force and transmission electron microscopy show that thick silicon oxides (20 ± 5 nm) are found in PolyMUMPs films, caused by galvanic corrosion from the presence of gold on the chip, whereas in SUMMiT films a much thinner (3.5 ± 1.0 nm) native oxide was observed. These thicker oxide layers, in combination with differences in sidewall roughness (14 ± 5 nm for PolyMUMPs and 10 ± 2 nm for SUMMiT), have a significant effect on the fracture and fatigue properties of polysilicon structures; this is shown by measuring fracture strength (3.8 ± 0.3 GPa for PolyMUMPs and 4.8 ± 0.2 GPa for SUMMiT) and stress-lifetime high-cyclic fatigue curves.
Original languageEnglish
Title of host publication12th International Conference on Fracture 2009 (ICF-12)
PublisherInternational Conference on Fracture
Pages4051-4060
Volume5
ISBN (Print)9781617382277
Publication statusPublished - Jul 2009
Externally publishedYes
Event12th International Conference on Fracture 2009 (ICF-12) - Ottawa, Canada
Duration: 12 Jul 200917 Jul 2009

Publication series

NameInternational Congress on Fracture (ICF)
PublisherInternational Congress on Fracture

Conference

Conference12th International Conference on Fracture 2009 (ICF-12)
PlaceCanada
CityOttawa
Period12/07/0917/07/09

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