Effect of Sb on GaNAs Intermediate Band Solar Cells

Nazmul Ahsan; Naoya Miyashita; Muhammad M. Islam; Kin Man Yu; Wladek Walukiewicz; Yoshitaka Okada

doi:10.1109/PVSC-Vol2.2013.6656723

Effect of Sb on GaNAs Intermediate Band Solar Cells

Nazmul Ahsan, Naoya Miyashita, Muhammad M. Islam, Kin Man Yu, Wladek Walukiewicz, Yoshitaka Okada

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

2 Citations (Scopus)

Abstract

We present a comparative study on the material properties and two photon excitation (TPE) experiments involving three bands between a GaNAs and a GaNAsSb absorber designed for intermediate band solar cells. The absorber layers were sandwiched between p-AlGaAs emitter layers and n-AlGaAs IB barrier layers. This permits production of above the bandgap electron-hole pairs by TPE involving two subband photons with the intermediate band as the stepping stone. A recovery in the carrier population in the intermediate band of the GaNAsSb absorber was realized due to an improved material quality. An enhancement in the photocurrent production due to TPE, and an associated improvement in the open circuit voltage were observed.

Original language	English
Title of host publication	PROGRAM - 38th IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE
DOIs	https://doi.org/10.1109/PVSC-Vol2.2013.6656723
Publication status	Published - Jun 2012
Externally published	Yes
Event	38th IEEE Photovoltaic Specialists Conference (PVSC 2012) - Austin Convention Center, Austin, United States Duration: 3 Jun 2012 → 8 Jun 2012

Publication series

Name
ISSN (Print)	0160-8371

Conference

Conference	38th IEEE Photovoltaic Specialists Conference (PVSC 2012)
Place	United States
City	Austin
Period	3/06/12 → 8/06/12

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Research Keywords

dilute nitride
Intermediate band solar cell
molecular beam epitaxy
two-step photon excitation

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10.1109/PVSC-Vol2.2013.6656723

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Cite this

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title = "Effect of Sb on GaNAs Intermediate Band Solar Cells",

abstract = "We present a comparative study on the material properties and two photon excitation (TPE) experiments involving three bands between a GaNAs and a GaNAsSb absorber designed for intermediate band solar cells. The absorber layers were sandwiched between p-AlGaAs emitter layers and n-AlGaAs IB barrier layers. This permits production of above the bandgap electron-hole pairs by TPE involving two subband photons with the intermediate band as the stepping stone. A recovery in the carrier population in the intermediate band of the GaNAsSb absorber was realized due to an improved material quality. An enhancement in the photocurrent production due to TPE, and an associated improvement in the open circuit voltage were observed.",

keywords = "dilute nitride, Intermediate band solar cell, molecular beam epitaxy, two-step photon excitation",

author = "Nazmul Ahsan and Naoya Miyashita and Islam, {Muhammad M.} and Yu, {Kin Man} and Wladek Walukiewicz and Yoshitaka Okada",

year = "2012",

month = jun,

doi = "10.1109/PVSC-Vol2.2013.6656723",

language = "English",

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T1 - Effect of Sb on GaNAs Intermediate Band Solar Cells

AU - Ahsan, Nazmul

AU - Miyashita, Naoya

AU - Islam, Muhammad M.

AU - Yu, Kin Man

AU - Walukiewicz, Wladek

AU - Okada, Yoshitaka

PY - 2012/6

Y1 - 2012/6

N2 - We present a comparative study on the material properties and two photon excitation (TPE) experiments involving three bands between a GaNAs and a GaNAsSb absorber designed for intermediate band solar cells. The absorber layers were sandwiched between p-AlGaAs emitter layers and n-AlGaAs IB barrier layers. This permits production of above the bandgap electron-hole pairs by TPE involving two subband photons with the intermediate band as the stepping stone. A recovery in the carrier population in the intermediate band of the GaNAsSb absorber was realized due to an improved material quality. An enhancement in the photocurrent production due to TPE, and an associated improvement in the open circuit voltage were observed.

AB - We present a comparative study on the material properties and two photon excitation (TPE) experiments involving three bands between a GaNAs and a GaNAsSb absorber designed for intermediate band solar cells. The absorber layers were sandwiched between p-AlGaAs emitter layers and n-AlGaAs IB barrier layers. This permits production of above the bandgap electron-hole pairs by TPE involving two subband photons with the intermediate band as the stepping stone. A recovery in the carrier population in the intermediate band of the GaNAsSb absorber was realized due to an improved material quality. An enhancement in the photocurrent production due to TPE, and an associated improvement in the open circuit voltage were observed.

KW - dilute nitride

KW - Intermediate band solar cell

KW - molecular beam epitaxy

KW - two-step photon excitation

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U2 - 10.1109/PVSC-Vol2.2013.6656723

DO - 10.1109/PVSC-Vol2.2013.6656723

M3 - RGC 32 - Refereed conference paper (with host publication)

SN - 9781467328883

SN - 1467300667

BT - PROGRAM - 38th IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE

T2 - 38th IEEE Photovoltaic Specialists Conference (PVSC 2012)

Y2 - 3 June 2012 through 8 June 2012

ER -

Effect of Sb on GaNAs Intermediate Band Solar Cells

Abstract

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UN SDGs

Research Keywords

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