Abstract
We present a comparative study on the material properties and two-photon excitation (TPE) experiments that involve three bands between a GaNAs and a GaNAsSb absorber designed for intermediate band solar cells. The absorber layers were sandwiched between p-AlGaAs emitter layers and n-AlGaAs IB barrier layers. This permits production of above the bandgap electron-hole pairs by TPE involving two subband photons with the intermediate band as the stepping stone. A recovery in the carrier population in the intermediate band of the GaNAsSb absorber was realized due to an improved material quality. An enhancement in the photocurrent production due to TPE and an associated improvement in the open-circuit voltage were observed.
| Original language | English |
|---|---|
| Article number | 6384641 |
| Pages (from-to) | 730-736 |
| Journal | IEEE Journal of Photovoltaics |
| Volume | 3 |
| Issue number | 2 |
| Online published | 20 Dec 2012 |
| DOIs | |
| Publication status | Published - Apr 2013 |
| Externally published | Yes |
UN SDGs
This output contributes to the following UN Sustainable Development Goals (SDGs)
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SDG 7 Affordable and Clean Energy
Research Keywords
- Dilute nitride
- intermediate band solar cell (IBSC)
- molecular beam epitaxy (MBE)
- two-step photon excitation
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