Effect of porous morphology on phase transition in vanadium dioxide thin films

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

12 Scopus Citations
View graph of relations

Author(s)

Detail(s)

Original languageEnglish
Article number061508
Journal / PublicationJournal of Vacuum Science and Technology A
Volume33
Issue number6
Online published27 Aug 2015
Publication statusPublished - Nov 2015
Externally publishedYes

Abstract

Vanadium oxide (VO2) thin films were prepared on Si (100) substrates by direct current magnetron sputtering at room temperature, and then, postannealing was conducted at 450 °C for 2 h in vacuum. Structural characterizations demonstrated that the thin films exhibited porous morphology upon thermal annealing and the porosity and pore size depended on the oxygen flow rate in the process of film fabrication. Raman spectra were measured in the temperature range of 303–343 K, and resistance measurement was conducted in the temperature range of 293–363 K, to study the influence of porous morphology on the phase transition in VO2 thin films. It was illustrated that the porous morphology could provide a free space to release the stress induced in the monoclinic-to-tetragonal phase transition of VO2, and lower the transition temperature to a certain degree.

Citation Format(s)

Effect of porous morphology on phase transition in vanadium dioxide thin films. / Xu, Hui Yan; Huang, Yu Hong; Li, Jin Ping; Ma, Fei; Xu, Ke Wei.

In: Journal of Vacuum Science and Technology A, Vol. 33, No. 6, 061508, 11.2015.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review