TY - JOUR
T1 - Effect of plating current density and annealing on impurities in electroplated Cu film
AU - Liu, Chi-Wen
AU - Wang, Ying-Lang
AU - Tsai, Ming-Shih
AU - Feng, Hsien-Ping
AU - Chang, Shih-Chieh
AU - Hwang, Gwo-Jen
N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].
PY - 2005/7
Y1 - 2005/7
N2 - This study uses secondary-ion-mass spectrometry to examine the effects of plating current density and annealing temperature on the nature of electroplated copper (Cu) films. The experimental results reveal that high levels of impurities, such as C, O, S, and Cl, are incorporated into Cu deposits at the lower current density region while superfilling occurs. The C and O impurities can be released from the plated films by thermal annealing, while S and Cl cannot. This work proposes a possible mechanism based on bond strength to explain the phenomena. Rapid C and O desorption is observed when the films are first cycled to 220 °C immediately after electroplating. The activation energy of C desorption is found to be approximately 9.8 kJmol. For Cu electroplating, this investigation suggests that high plating current density and an adequate annealing temperature are required to reduce impurities. © 2005 American Vacuum Society.
AB - This study uses secondary-ion-mass spectrometry to examine the effects of plating current density and annealing temperature on the nature of electroplated copper (Cu) films. The experimental results reveal that high levels of impurities, such as C, O, S, and Cl, are incorporated into Cu deposits at the lower current density region while superfilling occurs. The C and O impurities can be released from the plated films by thermal annealing, while S and Cl cannot. This work proposes a possible mechanism based on bond strength to explain the phenomena. Rapid C and O desorption is observed when the films are first cycled to 220 °C immediately after electroplating. The activation energy of C desorption is found to be approximately 9.8 kJmol. For Cu electroplating, this investigation suggests that high plating current density and an adequate annealing temperature are required to reduce impurities. © 2005 American Vacuum Society.
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U2 - 10.1116/1.1931679
DO - 10.1116/1.1931679
M3 - RGC 21 - Publication in refereed journal
SN - 0734-2101
VL - 23
SP - 658
EP - 662
JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
IS - 4
ER -