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Effect of Oxygen Vacancy on Electrical Property of Acceptor Doped BaTiO3–Na0.5Bi0.5TiO3–Nb2O5X8R Systems

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

Abstract

In this study, we reported a new BaTiO3–Na0.5Bi0.5TiO3–Nb2O5–Mn2O3/Fe2O3/Co3O4/In2O3X8R system with high dielectric constant (>2100) at room temperature. The impacts of oxygen vacancy ((Formula presented.)) on dielectric, electrical conductivity, and ferroelectric properties were systematically studied. The Curie point is largely depended on the (Formula presented.) concentration, which can be confirmed by the dielectric behavior and A1goctahedral breathing modes in Raman spectrum. In addition, the activation energy of (Formula presented.) diffusion is greatly reduced with the increase in (Formula presented.) concentration. It was found that the remnant polarization and coercive field were both decreased with increasing (Formula presented.) concentration, due to the facilitated defect dipoles reorientation and domain switching. © 2016 The American Ceramic Society
Original languageEnglish
Pages (from-to)3067-3073
JournalJournal of the American Ceramic Society
Volume99
Issue number9
DOIs
Publication statusPublished - 1 Sept 2016
Externally publishedYes

Bibliographical note

Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

Funding

This work was supported by Natural Science Foundation of China (no. 51372191), International Science and Technology Cooperation Program of China (2011DFA52680), and the National Key Basic Research Program of China (973 Program) (no. 2015CB654601). The author S. Zhang thanks Australian Research Council for support through Future Fellowships scheme (FT140100698).

Research Keywords

  • barium titanate
  • dielectric materials/properties
  • multilayer capacitor

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